Experimental, in situ, high-temperature studies of properties and structure of silicate melts relevant to magmatic processes

1995 ◽  
Vol 7 (4) ◽  
pp. 745-766 ◽  
Author(s):  
Bjorn Mysen
Keyword(s):  
High Temperature ◽  
Silicate Melts ◽  
Magmatic Processes

In situ visualization of crystallization inside high temperature silicate melts

2010 ◽  
Vol 107 (11) ◽  
pp. 114907 ◽  
Author(s):  
Atul Srivastava ◽  
Yuko Inatomi ◽  
Katsuo Tsukamoto ◽  
T Maki ◽  
Hitoshi Miura
Keyword(s):  
High Temperature ◽  
Silicate Melts ◽  
In Situ Visualization

In-Situ high temperature X-ray absorption study of iron in alkali silicate melts and glasses

1989 ◽  
Vol 158 (1-3) ◽  
pp. 67-68 ◽  
Author(s):  
G.A. Waychunas ◽  
G.E. Brown ◽  
W.E. Jackson ◽  
C.W. Ponader
Keyword(s):  
High Temperature ◽  
Silicate Melts ◽  
Absorption Study ◽  
X Ray ◽  
Alkali Silicate ◽  
X Ray Absorption

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

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