Effect of misorientation angle on the photoluminescence spectra of Si (δ)-doped GaAs (111)A layers grown by molecular beam epitaxy

2001 ◽  
Vol 46 (2) ◽  
pp. 88-91
Author(s):  
G. B. Galiev ◽  
V. G. Mokerov ◽  
Yu. V. Khabarov
1989 ◽  
Vol 39 (5) ◽  
pp. 3138-3144 ◽  
Author(s):  
Katsuhiro Akimoto ◽  
Takao Miyajima ◽  
Yoshifumi Mori

1986 ◽  
Vol 59 (3) ◽  
pp. 888-891 ◽  
Author(s):  
Kazuhiro Kudo ◽  
Yunosuke Makita ◽  
Ichiro Takayasu ◽  
Toshio Nomura ◽  
Toshihiko Kobayashi ◽  
...  

2006 ◽  
Vol 3 (6) ◽  
pp. 1870-1873
Author(s):  
Tohru Honda ◽  
Masaru Sawada ◽  
Toshiaki Kobayashi ◽  
Shinichi Egawa ◽  
Yohta Aoki ◽  
...  

1992 ◽  
Vol 61 (13) ◽  
pp. 1540-1542 ◽  
Author(s):  
Jie Cui ◽  
Hai‐Long Wang ◽  
Fu‐Xi Gan ◽  
Xu‐Guang Huang ◽  
Zhi‐Gang Cai ◽  
...  

1984 ◽  
Vol 55 (10) ◽  
pp. 3765-3768 ◽  
Author(s):  
M. Mihara ◽  
Y. Nomura ◽  
M. Mannoh ◽  
K. Yamanaka ◽  
S. Naritsuka ◽  
...  

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