Characterization of light-emitting diodes based on InAsSbP/InAsSb structures grown by metal-organic vapor-phase epitaxy

2003 ◽  
Vol 37 (8) ◽  
pp. 955-959 ◽  
Author(s):  
N. V. Zotova ◽  
S. S. Kizhaev ◽  
S. S. Molchanov ◽  
T. I. Voronina ◽  
T. S. Lagunova ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Organic Vapor ◽  
Metal Organic

Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy

2019 ◽  
Vol 30 (13) ◽  
pp. 134002 ◽  
Author(s):  
Junichi Motohisa ◽  
Hiroki Kameda ◽  
Masahiro Sasaki ◽  
Katsuhiro Tomioka
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

2013 ◽  
Vol 6 (9) ◽  
pp. 092105 ◽  
Author(s):  
Benjamin Damilano ◽  
Hyonju Kim-Chauveau ◽  
Eric Frayssinet ◽  
Julien Brault ◽  
Sakhawat Hussain ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Organic Vapor ◽  
Metal Organic

Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 12A) ◽  
pp. 6443-6447 ◽  
Author(s):  
Peter Hacke ◽  
Atsuyoshi Maekawa ◽  
Norikatsu Koide ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Organic Vapor ◽  
Metal Organic ◽  
Si Doped

Growth and Characterization of n‐Type (Te) Doped Metal Organic Vapor Phase Epitaxy GaInSb

1993 ◽  
Vol 140 (8) ◽  
pp. 2406-2409 ◽  
Author(s):  
A. Giani ◽  
F. Pascal‐Delannoy ◽  
G. Bougnot ◽  
G. G. Allogho ◽  
J. Bougnot
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic
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