Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal–organic vapor phase epitaxy
2008 ◽
Vol 310
(23)
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pp. 5214-5216
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2002 ◽
Vol 41
(Part 1, No. 4B)
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pp. 2489-2492
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1998 ◽
Vol 10
(9)
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pp. 1223-1225
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