schottky type
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Author(s):  
Qianshu Wu ◽  
Jia Chen ◽  
Liang He ◽  
Jinwei Zhang ◽  
Qiuling Qiu ◽  
...  

2021 ◽  
Author(s):  
Serhii Kuryshchuk ◽  
Mykhailo Solovan ◽  
Andrii Mostovyi
Keyword(s):  

2021 ◽  
Author(s):  
longxing Su ◽  
Lianqi Zhao ◽  
Sheng-Yu Chen ◽  
Yingdong Deng ◽  
Ruihua Pu ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 2776
Author(s):  
Yuan Huang ◽  
Haoting Yan ◽  
Chenyang Zhang ◽  
Yize Wang ◽  
Qinhong Wei ◽  
...  

Metal-supported catalyst with high activity and relatively simple preparation method is given priority to industrial production. In this work, this study reported an easily accessible synthesis strategy to prepare Mott-Schottky-type N-doped carbon encapsulated metallic Co (Co@Np+gC) catalyst by high-temperature pyrolysis method in which carbon nitride (g-C3N4) and dopamine were used as support and nitrogen source. The prepared Co@Np+gC presented a Mott-Schottky effect; that is, a strong electronic interaction of metallic Co and N-doped carbon shell was constructed to lead to the generation of Mott-Schottky contact. The metallic Co, due to high work function as compared to that of N-doped carbon, transferred electrons to the N-doped outer shell, forming a new contact interface. In this interface area, the positive and negative charges were redistributed, and the catalytic hydrogenation mainly occurred in the area of active charges. The Co@Np+gC catalyst showed excellent catalytic activity in the hydrogenation of phenylacetylene to styrene, and the selectivity of styrene reached 82.4%, much higher than those of reference catalysts. The reason for the promoted semi-hydrogenation of phenylacetylene was attributed to the electron transfer of metallic Co, as it was caused by N doping on carbon.


2021 ◽  
Vol 29 ◽  
pp. 104764
Author(s):  
Apoorva Sood ◽  
Fow-Gow Tarntair ◽  
Yu-Xuan Wang ◽  
Ting-Chang Chang ◽  
Yu-Hsuan Chen ◽  
...  

2021 ◽  
Vol 119 (5) ◽  
pp. 053503
Author(s):  
Li Zhang ◽  
Zheyang Zheng ◽  
Song Yang ◽  
Wenjie Song ◽  
Sirui Feng ◽  
...  

2021 ◽  
Vol 130 ◽  
pp. 105799
Author(s):  
Mrinmay Das ◽  
Pubali Das ◽  
Joydeep Datta ◽  
Dhananjoy Das ◽  
Somobrata Acharya ◽  
...  

2021 ◽  
Vol 140 ◽  
pp. 107092
Author(s):  
Mina Ebrahimzadeh ◽  
Azadeh Haghighatzadeh ◽  
Joydeep Dutta

2021 ◽  
pp. 2150412
Author(s):  
Liping Fu ◽  
Xiaoqiang Song ◽  
Yonggang Li ◽  
Zewei Wu ◽  
Xiaolong Fan ◽  
...  

Titanium oxide has been considered a promising candidate for Schottky-type diode application. In this paper, an alternative approach for improving electrical properties of TiO[Formula: see text]-based Schottky-type diode has been demonstrated. Compared with the Ag/TiO[Formula: see text]/Ti structure Schottky-type diode, by embedding an extra ZrO2 insulating layer between the Ag/TiO[Formula: see text] interface, an extremely high rectifying ratio of 109 can be obtained in the Ag/ZrO2/TiO[Formula: see text]/Ti structure device. The improvement of the electrical properties in the Ag/ZrO2/TiO[Formula: see text]/Ti structure device can be attributed to the localized formation of Ag metal conductive filaments in ZrO2 layer after switching on.


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