Base thickness determination from the punch-through voltage for vertical n-p-n transistors incorporated into I2L elements

2004 ◽  
Vol 49 (2) ◽  
pp. 269-271
Author(s):  
S. V. Shutov ◽  
A. N. Frolov ◽  
V. N. Litvinenko ◽  
A. A. Frolov
Keyword(s):  
Base Thickness ◽  
Thickness Determination

scholarly journals Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

2020 ◽  
Vol 12 (10) ◽  
pp. 145-158
Author(s):  
Amadou Mar Ndiaye ◽  
Sega Gueye ◽  
Mame Faty Mbaye Fall ◽  
Gora Diop ◽  
Amadou Mamour Ba ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Solar Cell ◽  
Resonance Frequency ◽  
Silicon Solar Cell ◽  
Base Thickness ◽  
Thickness Determination ◽  
At Resonance

Quantitative x-ray microanalysis and thickness determination using ζ factor

1996 ◽  
Vol 54 ◽  
pp. 580-581
Author(s):  
M. Watanabe ◽  
Z. Horita ◽  
M. Nemoto
Keyword(s):  
Diffusion Couple ◽  
Extrapolation Method ◽  
Thin Specimen ◽  
Beam Position ◽  
X Ray ◽  
Thickness Determination ◽  
Experimental Limitation ◽  
X Ray Absorption

X-ray absorption in quantitative x-ray microanalysis of thin specimens may be corrected without knowledge of thickness when the extrapolation method or the differential x-ray absorption (DXA) method is used. However, there is an experimental limitation involved in each method. In this study, a method is proposed to overcome such a limitation. The method is developed by introducing the ζ factor and by combining the extrapolation method and DXA method. The method using the ζ factor, which is called the ζ-DXA method in this study, is applied to diffusion-couple experiments in the Ni-Al system.For a thin specimen where incident electrons are fully transparent, the characteristic x-ray intensity generated from a beam position, I, may be represented as I = (NρW/A)Qωaist.

Convergent-beam thickness determination: The advantages of digital imaging

1994 ◽  
Vol 52 ◽  
pp. 420-421
Author(s):  
Stuart McKernan ◽  
C. Barry Carter
Keyword(s):  
Intensity Variation ◽  
Convergent Beam Electron Diffraction ◽  
Digital Data ◽  
Thickness Determination ◽  
Frequent Use ◽  
Automated Processing ◽  
Beam Thickness ◽  
Convergent Beam ◽  
Remarkable Agreement

Convergent-beam electron diffraction (CBED) patterns contain an immense amount of information relating to the structure of the material from which they are obtained. The analysis of these patterns has progressed to the point that under appropriate, well specified conditions, the intensity variation within the CBED discs may be understood in a quantitative sense. Rossouw et al for example, have produced numerical simulations of zone-axis CBED patterns which show remarkable agreement with experimental patterns. Spence and co-workers have obtained the structure factor parameters for lowindex reflections using the intensity variation in 2-beam CBED patterns. Both of these examples involve the use of digital data. Perhaps the most frequent use for quantitative CBED analysis is the thickness determination described by Kelly et al. This analysis has been implemented in a variety of different ways; from real-time, in-situ analysis using the microscope controls, to measurements of photographic prints with a ruler, to automated processing of digitally acquired images. The potential advantages of this latter process will be presented.

Thickness determination of ultrathin oxide films and its application in magnetic tunnel junctions

2006 ◽  
Vol 35 (12) ◽  
pp. 2142-2146 ◽  
Author(s):  
J. Joshua Yang ◽  
Chengxiang Ji ◽  
Ying Yang ◽  
Y. Austin Chang ◽  
Feng X. Liu ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Oxide Films ◽  
Magnetic Tunnel Junctions ◽  
Thickness Determination ◽  
Ultrathin Oxide Films ◽  
Ultrathin Oxide

Rapid microcantilever-thickness determination by optical interferometry

2013 ◽  
Vol 25 (1) ◽  
pp. 015202 ◽  
Author(s):  
Andrew R Salmon ◽  
Matthew J Capener ◽  
Jeremy J Baumberg ◽  
Stephen R Elliott
Keyword(s):  
Optical Interferometry ◽  
Thickness Determination

Thickness determination of thin and ultra-thin SiO2 films by C-AFM IV-spectroscopy

2006 ◽  
Vol 252 (6) ◽  
pp. 2375-2388 ◽  
Author(s):  
Werner Frammelsberger ◽  
Guenther Benstetter ◽  
Janice Kiely ◽  
Richard Stamp
Keyword(s):  
Sio2 Films ◽  
Thickness Determination
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