Numerical Modeling of the Radiation Heating of Various Semiconductor Heterostructures

ABSTRACTWe propose a new approach for modeling of impurity diffusion at semiconductor heterointerfaces. The approach is based on the notion of a common energy reference for highly localized defects. It is shown that in the kick-out process, the segregation of group II acceptors is controlled by the valence band offsets among different constituent layers of the heterostructure. Extensive numerical modeling of the diffusion provides an explanation for the experimentally observed strong segregation of Zn and Be acceptors in the lattice matched InP/InGaAs, InP/InGaAsP and GaAs/AlGaAs heterostructures.

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Towards the dynamics of the temperature field gradient in a layer of an inorganic material under radiation heating according to the data of experiments and numerical modeling

Journal of Engineering Physics and Thermophysics ◽

10.1007/s10891-012-0703-0 ◽

2012 ◽

Vol 85 (3) ◽

pp. 691-699

Author(s):

V. R. Sobol ◽

P. N. Goman ◽

O. N. Mazurenko

Keyword(s):

Numerical Modeling ◽

Temperature Field ◽

Field Gradient ◽

Inorganic Material ◽

Radiation Heating

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Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106600 ◽

1988 ◽

Vol 46 ◽

pp. 908-909

Author(s):

E.G. Bithell ◽

W.M. Stobbs

Keyword(s):

Ion Implantation ◽

Diffusion Coefficients ◽

Dark Field ◽

Atomic Mass ◽

Composition Profile ◽

Semiconductor Heterostructures ◽

Transmission Electron ◽

Microscope Images ◽

Damage Process ◽

Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

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Prediction of LPCVD silicon film microstructure from local operating conditions using numerical modeling

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1999822 ◽

1999 ◽

Vol 09 (PR8) ◽

pp. Pr8-181-Pr8-188 ◽

Cited By ~ 1

Author(s):

A. Dollet ◽

B. Caussat ◽

J. P. Couderc

Keyword(s):

Numerical Modeling ◽

Silicon Film ◽

Operating Conditions ◽

Film Microstructure

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Investigation of Morphosedimentary Processes on a Schematic Louisiana Barrier Island Using Process-Based Numerical Modeling

Coastal Sediments '07 ◽

10.1061/40926(239)51 ◽

2007 ◽

Author(s):

T. Campbell ◽

B. de Sonneville ◽

L. Benedet ◽

D. J. W. Walstra ◽

C. W. Finkl

Keyword(s):

Numerical Modeling ◽

Barrier Island

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Numerical Modeling of Hurricane-Induced Extreme Wave Heights in Pensacola Bay

Coastal Hazards ◽

10.1061/9780784412664.007 ◽

2013 ◽

Author(s):

Wenrui Huang ◽

Yuan He ◽

Shuguang Liu

Keyword(s):

Numerical Modeling ◽

Extreme Wave ◽

Wave Heights

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SIMULATION OF ELECTRICAL MONITORING OF DAMS WITH LEAKAGE WITH A TRANSVERSE PLACEMENT OF THE MEASURING INSTALLATION

Eurasian Journal of Mathematical and Computer Applications ◽

10.32523/2306-6172-2020-8-4-69-82 ◽

2020 ◽

Vol 8 (4) ◽

pp. 69-82

Author(s):

D.S. Rakisheva ◽

◽

B.G. Mukanova ◽

I.N. Modin ◽

◽

...

Keyword(s):

Numerical Modeling ◽

Water Level ◽

Electrical Resistivity Tomography ◽

Resistivity Tomography ◽

Measuring Installation ◽

Basic Functions ◽

Tomography Method ◽

Dam Monitoring ◽

The Mathematical Model ◽

Measurement Line

Numerical modeling of the problem of dam monitoring by the Electrical Resistivity Tomography method is carried out. The mathematical model is based on integral equations with a partial Fourier transform with respect to one spatial variable. It is assumed that the measurement line is located across the dam longitude. To approximate the shape of the dam surface, the Radial Basic Functions method is applied. The influence of locations of the water-dam, dam-basement, basement-leakage boundaries with respect to the sounding installation, which is partially placed under the headwater, is studied. Numerical modeling is carried out for the following varied parameters: 1) water level at the headwater; 2) the height of the leak; 3) the depth of the leak; 4) position of the supply electrode; 5) water level and leaks positions are changing simultaneously. Modeling results are presented in the form of apparent resistivity curves, as it is customary in geophysical practice.

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