Electrical properties and the determination of interface state density from I–V, C–f and G–f measurements in Ir/Ru/n-InGaN Schottky barrier diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1641-1649 ◽  
Author(s):  
R. Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diode

Electrical and interface state density properties of polyaniline–poly-3-methyl thiophene blend/p-Si Schottky barrier diode

2010 ◽  
Vol 12 (5) ◽  
pp. 706-711 ◽  
Author(s):  
Savaş Sönmezoğlu ◽  
Sevilay Şenkul ◽  
Recep Taş ◽  
Güven Çankaya ◽  
Muzaffer Can
Keyword(s):  
Schottky Barrier ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diode

Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode

2010 ◽  
Vol 42 (6-7) ◽  
pp. 1257-1260 ◽  
Author(s):  
H. Altuntas ◽  
A. Bengi ◽  
T. Asar ◽  
U. Aydemir ◽  
B. Sarıkavak ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diode ◽  
Tio2 Rutile

scholarly journals Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1698
Author(s):  
R. Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Series Resistance ◽  
Forward Bias ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Current Voltage ◽  
Density Of Interface States

The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340

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