Electrical and interface state density properties of polyaniline–poly-3-methyl thiophene blend/p-Si Schottky barrier diode

2010 ◽  
Vol 12 (5) ◽  
pp. 706-711 ◽  
Author(s):  
Savaş Sönmezoğlu ◽  
Sevilay Şenkul ◽  
Recep Taş ◽  
Güven Çankaya ◽  
Muzaffer Can
Keyword(s):  
Schottky Barrier ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diode

Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode

2010 ◽  
Vol 42 (6-7) ◽  
pp. 1257-1260 ◽  
Author(s):  
H. Altuntas ◽  
A. Bengi ◽  
T. Asar ◽  
U. Aydemir ◽  
B. Sarıkavak ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diode ◽  
Tio2 Rutile

DENSITY OF SURFACE STATES IN Pd/SiGe/Si INTERFACE FROM CAPACITANCE MEASUREMENTS

2007 ◽  
Vol 14 (04) ◽  
pp. 765-768 ◽  
Author(s):  
A. SELLAI ◽  
M. MAMOR ◽  
S. AL-HARTHI
Keyword(s):  
Energy Distribution ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Surface States ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diodes ◽  
Capacitance Measurements

Pd / Si 0.9 Ge 0.1/ Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C–V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

Current‐voltage characteristics and interface state density of GaAs Schottky barrier

1993 ◽  
Vol 62 (20) ◽  
pp. 2560-2562 ◽  
Author(s):  
Keiji Maeda ◽  
Hideaki Ikoma ◽  
Kenji Sato ◽  
Toshiki Ishida
Keyword(s):  
Schottky Barrier ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Current Voltage ◽  
Current Voltage Characteristics

Electron Bean Induced Defects in Silicon/Indium Oxide Heterojunctions and Interfacial Reactions During Annealing

1986 ◽  
Vol 76 ◽  
Author(s):  
S. Kar ◽  
A. Pandey ◽  
R. K. Dwivedi
Keyword(s):  
Experimental Data ◽  
Charge Density ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Fixed Charge Density ◽  
Induced Defects

ABSTRACTSi/In203 diodes have been prepared by e-beam evaporation of In203 tablets. Annealing of these devices was carried out in N2 and H2 /N2 mixture at 1 atm. in the temperature range of 400–800°C. Experimental data indicated a large increase in the Schottky barrier height and growth of interfacial oxide during annealing. The interface state density was reduced by a factor of 2, but the results indicated the increase in the barrier height to be mainly due to reduction of positive fixed charge density.

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