Temperature Dependences of Critical Parameters of Inhomogeneous Superconducting Films

Author(s):  
P. I. Bezotosnyi ◽  
K. A. Dmitrieva
2020 ◽  
Vol 47 (2) ◽  
pp. 48-53
Author(s):  
P. I. Bezotosnyi ◽  
K. A. Dmitrieva ◽  
S. Yu. Gavrilkin ◽  
A. N. Lykov ◽  
A. Yu. Tsvetkov

1991 ◽  
Vol 185-189 ◽  
pp. 2031-2032 ◽  
Author(s):  
E.M. Golyamina ◽  
V.I. Dedyu ◽  
A.N. Lykov ◽  
S.L. Prishchepa ◽  
A.M. Troyanovskii

2021 ◽  
Vol 63 (8) ◽  
pp. 1035
Author(s):  
П.И. Безотосный ◽  
К.А. Дмитриева

The results of calculating the temperature dependences of the critical current density and critical magnetic field of thin inhomogeneous superconducting films are presented. Comparison of the results obtained for inhomogeneous films with the results of calculations for homogeneous ones showed that in both cases, the decrease in the critical magnetic field occurs according to the root law, and the critical current density changes according to a power law with a degree of 3/2 when approaching the critical temperature. Quantitatively, the critical current density for inhomogeneous films in the absence of an external magnetic field is lower than for homogeneous ones. In turn, the critical magnetic field of inhomogeneous films is much larger than the critical field of homogeneous films.


2001 ◽  
Vol 11 (PR10) ◽  
pp. Pr10-217-Pr10-220
Author(s):  
S. Phok ◽  
A. Sin ◽  
Z. I. Supardi ◽  
Ph. Galez ◽  
J. L. Jorda ◽  
...  

Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.


1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-293-Pr3-296
Author(s):  
I. A. Khrebtov ◽  
V. N. Leonov ◽  
A. D. Tkachenko ◽  
P. V. Bratukhin ◽  
A. A. Ivanov ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-157-Pr11-161 ◽  
Author(s):  
S. Phok ◽  
Z. I. Supardi ◽  
A. Sin ◽  
Ph. Galez ◽  
J. L. Jorda ◽  
...  

2013 ◽  
Vol 58 (4) ◽  
pp. 1401-1403 ◽  
Author(s):  
J.A. Bartkowska ◽  
R. Zachariasz ◽  
D. Bochenek ◽  
J. Ilczuk

Abstract In the present work, the magnetoelectric coupling coefficient, from the temperature dependences of the dielectric permittivity for the multiferroic composite was determined. The research material was ferroelectric-ferromagnetic composite on the based PZT and ferrite. We investigated the temperature dependences of the dielectric permittivity (") for the different frequency of measurement’s field. From the dielectric measurements we determined the temperature of phase transition from ferroelectric to paraelectric phase. For the theoretical description of the temperature dependence of the dielectric constant, the Hamiltonian of Alcantara, Gehring and Janssen was used. To investigate the dielectric properties of the multiferroic composite this Hamiltonian was expressed under the mean-field approximation. Based on dielectric measurements and theoretical considerations, the values of the magnetoelectric coupling coefficient were specified.


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