Dependency of superconducting films critical parameters on their microstructure

1991 ◽  
Vol 185-189 ◽  
pp. 2031-2032 ◽  
Author(s):  
E.M. Golyamina ◽  
V.I. Dedyu ◽  
A.N. Lykov ◽  
S.L. Prishchepa ◽  
A.M. Troyanovskii
Keyword(s):  
Superconducting Films ◽  
Critical Parameters

Some Features of Critical Parameters Calculations of Nonhomogeneous Superconducting Films Using the Ginzburg–Landau Theory

2020 ◽  
Vol 47 (2) ◽  
pp. 48-53
Author(s):  
P. I. Bezotosnyi ◽  
K. A. Dmitrieva ◽  
S. Yu. Gavrilkin ◽  
A. N. Lykov ◽  
A. Yu. Tsvetkov
Keyword(s):  
Landau Theory ◽  
Superconducting Films ◽  
Critical Parameters ◽  
Ginzburg Landau

scholarly journals Critical parameters for the preparation of TI-1223 superconducting films by spray pyrolysis

2001 ◽  
Vol 11 (PR10) ◽  
pp. Pr10-217-Pr10-220
Author(s):  
S. Phok ◽  
A. Sin ◽  
Z. I. Supardi ◽  
Ph. Galez ◽  
J. L. Jorda ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Superconducting Films ◽  
Critical Parameters

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Noise of high-Tc superconducting films and bolometers

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-293-Pr3-296
Author(s):  
I. A. Khrebtov ◽  
V. N. Leonov ◽  
A. D. Tkachenko ◽  
P. V. Bratukhin ◽  
A. A. Ivanov ◽  
...  
Keyword(s):  
Superconducting Films ◽  
High Tc

Preparation of TI-1223 and TI-2223 superconducting films by spray pyrolysis

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-157-Pr11-161 ◽  
Author(s):  
S. Phok ◽  
Z. I. Supardi ◽  
A. Sin ◽  
Ph. Galez ◽  
J. L. Jorda ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Superconducting Films

New Insights into the Nature of the Band Gap of CuGeO3 Nanoparticles: Synthesis, Electronic Structure, and Optical and Photocatalytic Properties

2019 ◽  
Author(s):  
Victor Y. Suzuki ◽  
Luís Henrique Cardozo Amorin ◽  
Natália H. de Paula ◽  
Anderson R. Albuquerque ◽  
Julio Ricardo Sambrano ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Material Design ◽  
Photocatalytic Properties ◽  
Critical Parameters ◽  
Synthetic Approach ◽  
Microwave Assisted ◽  
Theoretical Approaches ◽  
Nanoparticles Synthesis ◽  
First Time

<p>We report, for the first time, new insights into the nature of the band gap of <a>CuGeO<sub>3</sub> </a>(CGO) nanocrystals synthesized from a microwave-assisted hydrothermal method in the presence of citrate. To the best of our knowledge, this synthetic approach has the shortest reaction time and it works at the lowest temperatures reported in the literature for the preparation of these materials. The influence of the surfactant on the structural, electronic, optical, and photocatalytic properties of CGO nanocrystals is discussed by a combination of experimental and theoretical approaches, and that results elucidates the nature of the band gap of synthetized CGO nanocrystals. We believe that this particular strategy is one of the most critical parameters for the development of innovative applications and that result could shed some light on the emerging material design with entirely new properties.</p> <p><b> </b></p>

Fundamental Considerations for CDM Failure in 90nm Products

2006 ◽  
Author(s):  
Nobuyuki Wakai ◽  
Yuji Kobira ◽  
Hidemitsu Egawa ◽  
Masayoshi Tsutsumi
Keyword(s):  
Breakdown Voltage ◽  
High Speed ◽  
Gate Oxide ◽  
Critical Parameters ◽  
Protection Device ◽  
Oxide Breakdown ◽  
Technology Products ◽  
Charged Device ◽  
Device Size ◽  
Fundamental Consideration

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.

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