Concentration, And Temperature Dependences Of Exciton Transition Energies In AlxGa1-xAs/GaAs/AlxGa1-xAs Nanofilms

2015 ◽  
Vol 60 (5) ◽  
pp. 458-467
Author(s):  
D.V. Kondryuk ◽  
◽  
V.M. Kramar
1999 ◽  
Vol 588 ◽  
Author(s):  
Chenjia Chen ◽  
Xuezhong Wang ◽  
Haitao Li ◽  
Xiaogan Liang ◽  
Guangyu Chai ◽  
...  

AbstractPhotoreflectance spectroscopy has been peformed on a series of Cd1−xMnxTe/Cd1−yMnyTe superlattices. Samples were grown on (001) GaAs substrates by molecular-beam epitaxy with different barriers (x=0.3 to 0.8) and wells (y=0 to 0.01). After taking into consideration the strain-induced and quantum confinement effects, the exciton transition energies of the heavy and light holes can be determined using envelope-function calculations. The calculations are in good agreement with the photoreflectance measurement results. These results show that photoreflectance is a powerful probe for the study of quantized state structures in superlattices.


1988 ◽  
Vol 38 (11) ◽  
pp. 7796-7799 ◽  
Author(s):  
P. W. Yu ◽  
G. D. Sanders ◽  
K. R. Evans ◽  
D. C. Reynolds ◽  
K. K. Bajaj ◽  
...  

1988 ◽  
Vol 144 ◽  
Author(s):  
B. Elman ◽  
Emil S. Koteles ◽  
P. Melman ◽  
C. A. Armiento

ABSTRACTLow energy ion implantation followed by rapid thermal annealing (RTA) was utilized to modify exciton transition energies of MBE- rown GaAs/AlGaAs quantum wells (QW). The samples were irradiated with an 75As ion beam with an energy low enough that the depth of the disordered region was spatially separated from the QWs. After RTA, exciton energies (determined using optical spectroscopy) showed large increases which were dependent on QW widths and the implantation fluence with no significant increases in peak linewidths. These energy shifts were interpreted as resulting from the modification of the shapes of the as-grown QWs from square (abrupt interfaces) to rounded due to enhanced Ga and Al interdiffusion in irradiated areas. These results are similar to our data on the RTA of the same structures capped with SiO2 and are consistent with the model of enhanced intermixing of Al and Ga atoms due to diffusion of vacancies generated near the surface.


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