The effect of adsorption on static conductivity of epitaxial graphene

2014 ◽  
Vol 40 (12) ◽  
pp. 1103-1106
Author(s):  
S. Yu. Davydov
1995 ◽  
Vol 52 (20) ◽  
pp. 14935-14940 ◽  
Author(s):  
Lorin X. Benedict ◽  
Vincent H. Crespi ◽  
Steven G. Louie ◽  
Marvin L. Cohen

2020 ◽  
Vol 1695 ◽  
pp. 012018
Author(s):  
I A Eliseyev ◽  
A V Babichev ◽  
S P Lebedev ◽  
P A Dementev ◽  
A V Zubov ◽  
...  
Keyword(s):  

2019 ◽  
Vol 3 (9) ◽  
Author(s):  
Markus Gruschwitz ◽  
Herbert Schletter ◽  
Steffen Schulze ◽  
Ioannis Alexandrou ◽  
Christoph Tegenkamp
Keyword(s):  

2020 ◽  
Vol 29 (5) ◽  
pp. 846-852
Author(s):  
Michael D. Pedowitz ◽  
Soaram Kim ◽  
Daniel I. Lewis ◽  
Balaadithya Uppalapati ◽  
Digangana Khan ◽  
...  

2012 ◽  
Vol 21 (9) ◽  
pp. 097304 ◽  
Author(s):  
Jia Li ◽  
Li Wang ◽  
Zhi-Hong Feng ◽  
Cui Yu ◽  
Qing-Bin Liu ◽  
...  

1990 ◽  
Vol 165-166 ◽  
pp. 1199-1200 ◽  
Author(s):  
A. Porch ◽  
J.R. Cooper ◽  
H.M. Cheah ◽  
J.S. Edmends ◽  
J.R. Waldram

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.


2013 ◽  
Vol 103 (20) ◽  
pp. 201911 ◽  
Author(s):  
J. Kunc ◽  
Y. Hu ◽  
J. Palmer ◽  
C. Berger ◽  
W. A. de Heer

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