Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms

2015 ◽  
Vol 10 (3-4) ◽  
pp. 192-204 ◽  
Author(s):  
P. L. Novikov ◽  
A. V. Nenashev ◽  
S. A. Rudin ◽  
A. S. Polyakov ◽  
A. V. Dvurechenskii
2005 ◽  
Vol 20 (12) ◽  
pp. 3278-3293 ◽  
Author(s):  
J-M. Baribeau ◽  
N.L. Rowell ◽  
D.J. Lockwood

We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1−xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1−xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1−xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.


2011 ◽  
Vol 98 (22) ◽  
pp. 221107 ◽  
Author(s):  
S. Cosentino ◽  
Pei Liu ◽  
Son T. Le ◽  
S. Lee ◽  
D. Paine ◽  
...  

2016 ◽  
Vol 57 (7) ◽  
pp. 1407-1416 ◽  
Author(s):  
S. B. Erenburg ◽  
S. V. Trubina ◽  
V. V. Zvereva ◽  
V. A. Zinov’ev ◽  
A. V. Dvurechenskiy ◽  
...  

2015 ◽  
Vol 60 (12) ◽  
pp. 1224-1233
Author(s):  
Yu.A. Romanyuk ◽  
◽  
A.M. Yaremko ◽  
V.M. Dzhagan ◽  
V.O. Yukhymchuk ◽  
...  

2021 ◽  
pp. 2229-2237
Author(s):  
Seyeong Lim ◽  
Gyudong Lee ◽  
Sanghun Han ◽  
Jigeon Kim ◽  
Sunhee Yun ◽  
...  

ACS Omega ◽  
2021 ◽  
Vol 6 (5) ◽  
pp. 3701-3710
Author(s):  
Dandan Wang ◽  
Meibo Xing ◽  
Yuyao Wei ◽  
Longxiang Wang ◽  
Ruixiang Wang ◽  
...  

2004 ◽  
Vol 224 (1-4) ◽  
pp. 152-155 ◽  
Author(s):  
S.W Lee ◽  
L.J Chen ◽  
P.S Chen ◽  
M.-J Tsai ◽  
C.W Liu ◽  
...  
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