MICROSTRUCTURE OF MULTILAYER HETEROSYSTEMS CONTAINING MOLECULES OF Ge QUANTUM DOTS IN Si ON THE STAGES OF NUCLEATION AND GROWTH BY EXAFS SPECTROSCOPY

2016 ◽  
Keyword(s):  
Quantum Dots ◽  
Nucleation And Growth ◽  
Exafs Spectroscopy ◽  
Ge Quantum Dots

Microstructure of multilayer heterosystems containing molecules of Ge quantum dots in Si on the stages of nucleation and growth as revealed by EXAFS spectroscopy

2016 ◽  
Vol 57 (7) ◽  
pp. 1407-1416 ◽  
Author(s):  
S. B. Erenburg ◽  
S. V. Trubina ◽  
V. V. Zvereva ◽  
V. A. Zinov’ev ◽  
A. V. Dvurechenskiy ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Nucleation And Growth ◽  
Exafs Spectroscopy ◽  
Ge Quantum Dots

Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms

2015 ◽  
Vol 10 (3-4) ◽  
pp. 192-204 ◽  
Author(s):  
P. L. Novikov ◽  
A. V. Nenashev ◽  
S. A. Rudin ◽  
A. S. Polyakov ◽  
A. V. Dvurechenskii
Keyword(s):  
Quantum Dots ◽  
High Efficiency ◽  
Nucleation And Growth ◽  
Ge Quantum Dots

Advances in the growth and characterization of Ge quantum dots and islands

2005 ◽  
Vol 20 (12) ◽  
pp. 3278-3293 ◽  
Author(s):  
J-M. Baribeau ◽  
N.L. Rowell ◽  
D.J. Lockwood
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Spatial Distribution ◽  
Strain Distribution ◽  
Growth Parameters ◽  
Nucleation And Growth ◽  
Structural And Optical Properties ◽  
Ge Quantum Dots

We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1−xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1−xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1−xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.

Raman Scattering in Superlattices with Ge Quantum Dots

2015 ◽  
Vol 60 (12) ◽  
pp. 1224-1233
Author(s):  
Yu.A. Romanyuk ◽  
◽  
A.M. Yaremko ◽  
V.M. Dzhagan ◽  
V.O. Yukhymchuk ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Raman Scattering ◽  
Ge Quantum Dots

scholarly journals Modeling of Nucleation and Growth in the Synthesis of PbS Colloidal Quantum Dots Under Variable Temperatures

ACS Omega ◽  
2021 ◽  
Vol 6 (5) ◽  
pp. 3701-3710
Author(s):  
Dandan Wang ◽  
Meibo Xing ◽  
Yuyao Wei ◽  
Longxiang Wang ◽  
Ruixiang Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Nucleation And Growth ◽  
Colloidal Quantum Dots

Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments

2004 ◽  
Vol 224 (1-4) ◽  
pp. 152-155 ◽  
Author(s):  
S.W Lee ◽  
L.J Chen ◽  
P.S Chen ◽  
M.-J Tsai ◽  
C.W Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ge Quantum Dots

scholarly journals Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates

2011 ◽  
Vol 22 (29) ◽  
pp. 295304 ◽  
Author(s):  
A Pérez del Pino ◽  
E György ◽  
I C Marcus ◽  
J Roqueta ◽  
M I Alonso
Keyword(s):  
Quantum Dots ◽  
Laser Radiation ◽  
Pulsed Laser ◽  
Pulsed Laser Radiation ◽  
Si Substrates ◽  
Ge Quantum Dots ◽  
Self Assembled

scholarly journals Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer

2007 ◽  
Vol 90 (15) ◽  
pp. 153104 ◽  
Author(s):  
Yoshiaki Nakamura ◽  
Masakazu Ichikawa ◽  
Kentaro Watanabe ◽  
Yasuhiro Hatsugai
Keyword(s):  
Quantum Dots ◽  
Electron Transfer ◽  
Quantum Fluctuation ◽  
Tunneling Current ◽  
Single Electron ◽  
Single Electron Transfer ◽  
Ge Quantum Dots
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