THE LUMINESCENCE RESPONSE OF PHOSPHORS TO LOW ENERGY ION BOMBARDMENT

The luminescence response of samples of ZnS:Ag and Zn2SiO4:Mn to bombardment with various ions was determined as a function of the ion energy. For ZnS:Ag, within the range of ion energies studied (E < 25 kev.), the luminescence response, L, is related to the ion energy, E, according to [Formula: see text]. E0 is a threshold energy which is not a very sensitive function of ion mass. For Zn2SiO4:Mn no threshold energy was observed except in the case of Li7+ ions, the lightest ions used with this phosphor. The experimental results for ZnS:Ag appear to be consistent with a theory in which it is assumed that the bombarding particles penetrate the phosphor as neutral atoms and produce luminescence by electronic excitation of the lattice atoms due to small impact parameter collisions.

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Ionization and autoionization in small impact parameter H + + He and in high energy Ne10+ + He collisions

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(89)90951-8 ◽

1989 ◽

Vol 40-41 ◽

pp. 178-183 ◽

Cited By ~ 4

Author(s):

G. Schiwietz ◽

B. Skogvall ◽

N. Stolterfoht ◽

D. Schneider ◽

V. Montemayor ◽

...

Keyword(s):

Impact Parameter ◽

High Energy ◽

Small Impact ◽

Small Impact Parameter

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Dynamic screening model for small impact parameter collisions between heavy ions

Physics Letters A ◽

10.1016/0375-9601(77)90848-9 ◽

1977 ◽

Vol 61 (2) ◽

pp. 97-98 ◽

Cited By ~ 11

Author(s):

B. Rosner ◽

W. Brandt

Keyword(s):

Impact Parameter ◽

Heavy Ions ◽

Small Impact ◽

Screening Model ◽

Dynamic Screening ◽

Small Impact Parameter

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Physical and Chemical Sputtering at Very Low Ion Energy: the Importance of the Sputtering Threshold

MRS Proceedings ◽

10.1557/proc-129-477 ◽

1988 ◽

Vol 129 ◽

Cited By ~ 4

Author(s):

Christoph Steinbruchel

Keyword(s):

Threshold Energy ◽

Surface Binding ◽

Ion Energy ◽

Chemical Sputtering ◽

Surface Binding Energy ◽

Physical Sputtering ◽

Chemical Etch ◽

Ion Energies ◽

The Difference ◽

Physical And Chemical

ABSTRACTA variety of data for physical etching (i.e. sputtering) and for ion-enhanced chemical etching of Si and SiO2 is analyzed in the very-low-ion-energy regime. Bombardment by inert ions alone, by reactive ions, and by inert ions in the presence of reactiveneutrals is considered. In all cases the etch yield follows a square root dependence on the ion energy all the way down to the threshold energy for etching. At the same time, the threshold energy has a non-negligible effect on the etch yield even at intermediate ion energies. The difference between physical and ion-enhanced chemical etch yields can be accounted for by a reduction in the average surface binding energy of the etch products and a corresponding reduction in the threshold energy for etching. These results suggest that, in general, the selectivity for ion-enhanced etch processes relative to physical sputtering can be increased significantly at low ion energy.

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