Use of fluorescent probes to determine catalytic chain length in chemically amplified resists

2005 ◽  
Vol 83 (6-7) ◽  
pp. 869-874 ◽  
Author(s):  
Mathieu Frenette ◽  
Marius Gabriel Ivan ◽  
J C Scaiano

Acid-catalyzed deprotection of tert-butoxycarbonyl (t-Boc) pendant groups present in a polymer film is one of the most common chemical reactions in photolithography. We present here a novel method to determine the catalytic chain length of this reaction under different development conditions. We demonstrate this in model PMMA thin films containing triphenylsulphonium triflate as a photoacid generator, acid sensor coumarin 6, t-Boc protected coumarin 4, and base 2-piperidin-1-yl-ethanol (2-PE). Deprotection of the t-Boc group, catalyzed by the photogenerated acid, during the post-exposure bake leads to formation of coumarin 4, a strongly fluorescent molecule whose concentration is monitored using fluorescence. We take advantage of the change in the emission spectra of coumarin 6 upon protonation to monitor acid formation. To quantify the amount of acid, an acid–base titration is done in the polymer film using 2-PE. Knowing the amount of deprotected probe and the amount of acid, we are able to calculate the number of moles of deprotected C4-t-Boc per mol of acid, which is the actual catalytic chain length.Key words: photolithography, chemical amplification, catalytic chain length, fluorescent sensors, photoacid generator.

2010 ◽  
Author(s):  
Byungki Jung ◽  
Jing Sha ◽  
Florencia Paredes ◽  
Christopher K. Ober ◽  
Michael O. Thompson ◽  
...  

2018 ◽  
Vol 6 (27) ◽  
pp. 7267-7273 ◽  
Author(s):  
Roberto Fallica ◽  
Yasin Ekinci

The rate of photoacid generation is measured experimentally and it is demonstrated to depend on the interaction between polymer backbone and photoacid generator. The clearing volume per absorbed photon and per generated photoacid is also calculated and discussed in view of lithographic resolution and roughness.


2004 ◽  
Vol 03 (06) ◽  
pp. 775-780
Author(s):  
D. LU ◽  
Z. X. XING ◽  
D. GUI ◽  
R. KERSTING

The microlithographic process is the core process in semiconductor device manufacturing. With continuous shrinkage in device geometry, deep-ultraviolet (DUV) photolithography is required to meet the industry needs. Modern microlithography is based on chemically-amplified (CA) resist via the acid-catalyzed deprotection of the pendant groups, which can be induced by either irradiation or thermolysis. Thermally-activated deprotection can occur in unexposed areas at temperatures close to the post-exposure bake temperature. Thermal deprotection can be detected by various techniques. In this paper, FTIR, TGA, TD-GC-MS and temperature-programmed ToF-SIMS are used to study the thermal deprotection in a commercial CA resist. The initiation temperature of thermal deprotection depends on the techniques used. Understanding the thermal deprotection mechanism is very important for materials selection and process optimization.


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