Impact of the vertical strain on the Schottky barrier height for graphene/AlN heterojunction: a study by the first-principles method

2021 ◽  
Vol 94 (1) ◽  
Author(s):  
Xuefei Liu ◽  
Zhaocai Zhang ◽  
Bing Lv ◽  
Zhao Ding ◽  
Zijiang Luo
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
First Principles ◽  
Schottky Barrier Height ◽  
Vertical Strain ◽  
First Principles Method

scholarly journals Schottky barrier height at metal/ZnO interface: A first-principles study

2019 ◽  
Vol 216 ◽  
pp. 111056 ◽  
Author(s):  
Jiaqi Chen ◽  
Zhaofu Zhang ◽  
Yuzheng Guo ◽  
John Robertson
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
First Principles ◽  
Schottky Barrier Height ◽  
First Principles Study

scholarly journals First principles study of Schottky barriers at Ga2O3(100)/metal interfaces

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14746-14752
Author(s):  
Ran Xu ◽  
Na Lin ◽  
Zhitai Jia ◽  
Yueyang Liu ◽  
Haoyuan Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
First Principles ◽  
High Performance ◽  
Schottky Barrier Height ◽  
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Schottky Barriers ◽  
First Principles Study ◽  
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A low Schottky barrier height (SBH) of metal–semiconductor contact is essential for achieving high performance electronic devices.

Schottky Barrier Height at Organic/Metal Junctions from First-Principles

2003 ◽  
Vol 2 (2-4) ◽  
pp. 407-411 ◽  
Author(s):  
S. Picozzi ◽  
A. Pecchia ◽  
M. Gheorghe ◽  
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P. Lugli ◽  
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Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
First Principles ◽  
Schottky Barrier Height ◽  
Organic Metal
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