Controlling the optical bistability in a three-level quantum-dot molecule via gate voltage and indirect incoherent pump field

2014 ◽  
Vol 68 (5) ◽  
Author(s):  
Hossein Jafarzadeh ◽  
Mostafa Sahrai ◽  
Kazem Jamshidi-Ghaleh
Keyword(s):  
Quantum Dot ◽  
Gate Voltage ◽  
Optical Bistability ◽  
Pump Field ◽  
Incoherent Pump

Controlling the optical bistability in a Λ-type atomic system via incoherent pump field

2014 ◽  
Vol 117 (3) ◽  
pp. 927-933 ◽  
Author(s):  
Hossein Jafarzadeh ◽  
Mostafa Sahrai ◽  
Kazem Jamshidi-Ghaleh
Keyword(s):  
Optical Bistability ◽  
Atomic System ◽  
Pump Field ◽  
Incoherent Pump

Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior

2008 ◽  
Vol 1108 ◽  
Author(s):  
Faquir C. Jain ◽  
Mukesh Gogna ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
Ernesto Suarez ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Voltage ◽  
Intermediate State ◽  
Gate Voltage ◽  
Inversion Layer ◽  
Similar Increase ◽  
State Behavior ◽  
Charge Neutralization ◽  
Ge Quantum Dot ◽  
State Device

AbstractThis paper presents electrical transfer (Id-Vg) and output (Id-Vds) characteristics of a GeOx-cladded-Ge quantum dot (QD) gate Si MOSFET devices. In QD gate FETs, the manifestation of an intermediate state ‘i” makes it a 3-state device. The intermediate state originates due to compensation of increment in the gate voltage by a similar increase in the threshold voltage, which occurs via charge neutralization in the QD gate due to transfer of charge from the inversion layer to either first or second of the two QD layers.

Behavior of optical bistability in multifold quantum dot molecules

Laser Physics ◽  
2015 ◽  
Vol 25 (2) ◽  
pp. 025403 ◽  
Author(s):  
H R Hamedi ◽  
M R Mehmannavaz
Keyword(s):  
Quantum Dot ◽  
Optical Bistability ◽  
Quantum Dot Molecules

COTUNNELING AND KONDO-TYPE TRANSPORT OF A QUANTUM DOT

2000 ◽  
Vol 14 (17) ◽  
pp. 1743-1752
Author(s):  
SHI-JIE XIONG
Keyword(s):  
Quantum Dot ◽  
Transport Properties ◽  
Single Particle ◽  
Gate Voltage ◽  
Electron Interaction ◽  
Kondo Temperature ◽  
Channel Network ◽  
Strong Electron ◽  
Multi Level

We investigate the transport properties of a multi-level quantum dot with strong electron–electron interaction by the use of the equivalent single-particle multi-channel network and Landauer formulae. By including the effect of cotunneling to the leads the calculated results show Kondo-type transport in valleys of conductance as a function of the gate voltage which was found in recent experiments. We calculate the Kondo temperature for various parameters. We discuss the condition for observing this effect in the experiments.

Phase and amplitude control of optical bistability in quantum dot molecules

2010 ◽  
Author(s):  
M. Mahmoudi ◽  
A. Vafafard ◽  
N. Nozari ◽  
S. Goharshenasan Esfahani
Keyword(s):  
Quantum Dot ◽  
Optical Bistability ◽  
Amplitude Control ◽  
Quantum Dot Molecules
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