Electron Drift in and Emission from Noble Liquids

2021 ◽  
pp. 85-126
Keyword(s):  
1979 ◽  
Vol 40 (C7) ◽  
pp. C7-63-C7-64
Author(s):  
A. J. Davies ◽  
J. Dutton ◽  
C. J. Evans ◽  
A. Goodings ◽  
P.K. Stewart

Author(s):  
Boris A. Sokolov ◽  
Pavel A. Shcherbina ◽  
Ivan B. Sishko ◽  
Aleksandr V. Shipovskiy Aleksandr ◽  
Aleksandr A. Lyapin ◽  
...  

The paper demonstrates the feasibility of using iodine as propellant for thrusters with closed electron drift and its economic viability. It describes a test setup for running experiments. It provides the results of experimental studies of the stationary plasma thruster using iodine as its propellant with xenon gas-passage hollow cathode, as well as of the operational mode of the thruster where a mixture of xenon and iodine is used. During tests gas dynamic and electrical properties of the thruster were analyzed. Thermal conditions in the iodine storage and supply system were studied. Conclusions were drawn on how the test object could be improved and upgraded. The paper describes the option to use a thermionic non-flow cathode as the compensator cathode for the operation of the iodine thruster. The paper provides the results of an experimental study of the prototype non-flow compensator cathode in diode mode. Based on the results of the studies an experimental facility was built for testing a thruster with non-flow compensator cathode. Key words: cathode, compensator cathode, thruster with closed electron drift, stationary plasma thruster, iodine.


1999 ◽  
Vol 75 (2) ◽  
pp. 131-142 ◽  
Author(s):  
Yasuhiro IDOMURA ◽  
Shinji TOKUDA ◽  
Masahiro WAKATANI

2021 ◽  
Vol 145 ◽  
pp. 110810
Author(s):  
D. Mandal ◽  
Y. Elskens ◽  
X. Leoncini ◽  
N. Lemoine ◽  
F. Doveil

2020 ◽  
Vol 1697 ◽  
pp. 012233
Author(s):  
V S Kurbanismailov ◽  
S A Maiorov ◽  
G B Ragimkhanov ◽  
Z R Khalikova

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.


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