Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

<div>Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks with peak velocity and corresponding field decreasing significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm²/Vs and 1.2x10⁶ cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7x10⁷ cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low- and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.</div>

Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

<div>Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks with peak velocity and corresponding field decreasing significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm²/Vs and 1.2x10⁶ cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7x10⁷ cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low- and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.</div>

Low-field Mobility and High-field Velocity of Charge Carriers in InGaAs/InP High-electron-mobility Transistors

<div>Development of transistors for advanced low noise amplifiers requires better understanding of mechanisms governing the charge carrier transport in correlation with the noise performance. In this paper, we report on study of the carrier velocity in InGaAs/InP high-electron-mobility transistors (HEMTs) found via geometrical magnetoresistance in the wide range of the drain fields, up to 2 kV/cm, at cryogenic temperature of 2 K. We observed, for the first time experimentally, the velocity peaks with peak velocity and corresponding field decreasing significantly with the transverse field. The low-field mobility and peak velocity are found to be up to 65000 cm²/Vs and 1.2x10⁶ cm/s, respectively. Extrapolations to the lower transverse fields show that the peak velocity can be as high as 2.7x10⁷ cm/s. The corresponding intrinsic transit frequency can be up to 172 GHz at the gate length of 250 nm. We demonstrated, for the first time, that the low-field mobility and peak velocity reveal opposite dependencies on the transverse field, indicating the difference in carrier transport mechanisms dominating at low- and high-fields. Therefore, the peak velocity is an appropriate parameter for characterization and development of the low noise HEMTs, complementary to the low-field mobility. The results of the research clarify the ways of the further development of the HEMTs for advanced applications.</div>

Analysis of Mobility in Graded-Channel SOI Transistors Aiming at Circuit Simulation

This work presents an analysis of the behavior of the effective mobility of graded-channel FD SOI transistors using an Y-Function-based technique. Low field mobility, linear and quadratic attenuation factors were extracted from two-dimensional numerical simulations. The influence of the length of both channel regions over these parameters was analyzed. The parameters extracted from experimental data were used in a SPICE simulator, showing that it is possible to simulated GC SOI MOSFET using a regular SOI MOSFET model, by adjusting its parameters.

Improved mobility models for charge transport in graphene

Charge transport in graphene is crucial for the design of a new generation of nanoscale electron devices. A reasonable model is represented by the semiclassical Boltzmann equations for electrons in the valence and conduction bands. As shown by Romano et al. (J. Comput. Phys., 2015), the discontinuous Galerkin methods are a viable way to tackle the problem of the numerical integration of these equations, even if efficient DSMC with a proper inclusion of the Pauli principle have been also devised. One of the advantages of the solutions obtained with deterministic approach is of course the absence of statistical noise. This fact is crucial for an accurate estimation of the low field mobility as proved by Majorana et al. (J. Math. Industry, 2016) in the case of a unipolar charge transport in a suspended graphene sheet under a constant electric field. The mobility expressions are essential for the drift-diffusion equations which constitute the most adopted models for charge transport in CAD. Here the analysis by Majorana et al. (J. Math. Industry, 2016) is improved in two ways: by including the charge transport both in the valence and conduction bands; by taking into account the presence of an oxide as substrate for the graphene sheet. New models of mobility are obtained and, in particular, relevant improvements of the low field mobility are achieved.