SCANNING TUNNELING MICROSCOPY STUDY OF EPITAXIAL GROWTH OF SI AND GE ON SILICON DURING GROWTH

Author(s):  
BERT VOIGTLÄNDER
Langmuir ◽  
2009 ◽  
Vol 25 (23) ◽  
pp. 13606-13613 ◽  
Author(s):  
Florian Mögele ◽  
Donato Fantauzzi ◽  
Ulf Wiedwald ◽  
Paul Ziemann ◽  
Bernhard Rieger

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