Scanning tunneling microscopy study of epitaxial growth of PbSe thin film on

2006 ◽  
Vol 294 (2) ◽  
pp. 179-183 ◽  
Author(s):  
H.F. Wu ◽  
H.J. Zhang ◽  
Y.H. Lu ◽  
T.N. Xu ◽  
J.X. Si ◽  
...  
Keyword(s):  
Thin Film ◽  
Scanning Tunneling Microscopy ◽  
Epitaxial Growth ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Scanning Tunneling Microscopy Study

Scanning Tunneling Microscopy Study of Single Domain β-SiC(100) Surfaces: Growth and Morphology

1998 ◽  
Vol 05 (01) ◽  
pp. 207-211 ◽  
Author(s):  
F. Semond ◽  
L. Douillard ◽  
P. Soukiassian ◽  
A. Mayne ◽  
G. Dujardin ◽  
...  
Keyword(s):  
Thin Film ◽  
Scanning Tunneling Microscopy ◽  
Microscopy Study ◽  
Single Domain ◽  
Scanning Tunneling ◽  
Low Density ◽  
Tunneling Microscopy ◽  
High Quality ◽  
Scanning Tunneling Microscopy Study

We investigate single domain β-SiC(100) thin film surfaces epitaxially grown on a vicinal (4°) Si(100) surface by atom-resolved (filled and empty states) scanning tunneling microscopy (STM). Contrary to previous beliefs, we observe high quality surfaces having a low density of defects. The β-SiC(100)-(3×2) surface, which is a Si-rich surface, is achieved by sequences of Si deposition and surface annealings. This results in the growth and coalescence of large Si islands and/or vacancies islands having the 3×2 array. Our results indicate the formation of asymmetric Si-Si dimers all tilted in the same direction and forming rows in a 3×2 arrangement at a 1/3 Si mon/layer coverage.

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