TITANIUM AND TUNGSTEN SILICIDES IN SILICON DEVICE TECHNOLOGY

2000 ◽  
Author(s):  
GIUSEPPE QUEIROLO
Keyword(s):  
Silicon Device ◽  
Device Technology ◽  
And Tungsten ◽  
Tungsten Silicides

Thin silicon device technology

1970 ◽  
Vol 3 (8) ◽  
pp. 1199-1204 ◽  
Author(s):  
D H Mash ◽  
G D Henshall ◽  
B A Eales
Keyword(s):  
Thin Silicon ◽  
Silicon Device ◽  
Device Technology

Beam Processing in Silicon Device Technology

1980 ◽  
Vol 1 ◽  
Author(s):  
C. Hill
Keyword(s):  
Pulse Duration ◽  
Integrated Circuit ◽  
Heat Pulse ◽  
Process Step ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Silicon Device ◽  
Device Technology

ABSTRACTThree modes of beam processing are distinguished, characterised by the heat pulse duration. The suitability of each of these modes as a process step in integrated circuit fabrication is discussed with reference to six criteria for applicability. Some conclusions are made as to the eventual application of each mode of processing.

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