RECENT DEVELOPMENTS IN GaInP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS

1994 ◽  
Vol 05 (03) ◽  
pp. 411-471 ◽  
Author(s):  
WILLIAM LIU ◽  
EDWARD BEAM ◽  
KIM TAE ◽  
ALI KHATIBZADEH
Keyword(s):  
Thermal Properties ◽  
High Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Microwave Power ◽  
Low Noise ◽  
Bipolar Transistors ◽  
Linear Amplification ◽  
Recent Developments ◽  
Temperature Applications

We review the recent developments of GaInP/GaAs heterojunction bipolar transistors (HBTs) used for microwave power, low noise, linear amplification and high temperature applications. Special attention is paid in the comparison of the GaInP HBT results with the more conventional AlGaAs HBTs. The material and processing advantages, as well as the electronic and thermal properties of GaInP are described.

scholarly journals A Low-Power, Low-Noise 37-MHz Photoreceiver for Intersatellite Laser Interferometers Using Discrete Heterojunction Bipolar Transistors

2018 ◽  
Vol 18 (18) ◽  
pp. 7414-7420 ◽  
Author(s):  
German Fernandez Barranco ◽  
Benjamin S. Sheard ◽  
Christian Dahl ◽  
Wolfgang Mathis ◽  
Gerhard Heinzel
Keyword(s):  
Low Power ◽  
Heterojunction Bipolar Transistors ◽  
Low Noise ◽  
Bipolar Transistors ◽  
Laser Interferometers

Self-Aligned AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Amplification

1990 ◽  
Author(s):  
Mau-Chung F. CHANG ◽  
Nan-Lei WANG ◽  
Peter M. ASBECK ◽  
Wu-Jing HO ◽  
Neng-Haung SHENG ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Microwave Power ◽  
Bipolar Transistors ◽  
Power Amplification

Thermal management of microwave power heterojunction bipolar transistors

1997 ◽  
Vol 41 (10) ◽  
pp. 1667-1673 ◽  
Author(s):  
C. Bozada ◽  
C. Cerny ◽  
G. De Salvo ◽  
R. Dettmer ◽  
J. Ebel ◽  
...  
Keyword(s):  
Thermal Management ◽  
Heterojunction Bipolar Transistors ◽  
Microwave Power ◽  
Bipolar Transistors
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