ELECTRONIC AND MAGNETIC PROPERTIES OF (Mn, C)-CODOPED GaN

2014 ◽  
Vol 28 (03) ◽  
pp. 1450017 ◽  
Author(s):  
GANG LIU ◽  
BIN HOU ◽  
RU ZHANG ◽  
GAO TAO

First-principle calculations have been performed to systematically investigate the electronic and magnetic properties of Mn / C -codoped GaN . The formation energy of five different configurations is studied and the ground state is demonstrated to be ferromagnetic ordering. The ferromagnetic stabilization is largely due to the strong p–d hybridization among Mn 3d, C 3d and N 2p states. Our calculations show that the GaN codoped with Mn and C has a stable FM ground state with a high Curie temperature. These results are positive to design the dilute magnetic semiconductors with codopants in spintronics applications.

2018 ◽  
Vol 92 (7) ◽  
pp. 847-854
Author(s):  
Sabria Terkhi ◽  
Samir Bentata ◽  
Zoubir Aziz ◽  
Tayeb Lantri ◽  
Boucif Abbar

2020 ◽  
Vol 34 (15) ◽  
pp. 2050160
Author(s):  
Manfu Wang ◽  
Hualong Tao ◽  
Yao Liang ◽  
Yan Cui ◽  
Shimin Liu ◽  
...  

First-principle calculations were performed to study electronic structures and magnetic properties of V-doped LiZnAs, as well as the effect of Li interstitial. The results showed that the magnetism origin of V-doped LiZnAs could be explained by [Formula: see text]–[Formula: see text] hybridization and the ferromagnetic (FM) state of the system was the ground state. The introduction of Li interstitials increased the distance between V and As atoms, which impaired the hybridization of V-[Formula: see text] and As-[Formula: see text]. As a result, the magnetic moment of V atom increased but the stability of FM coupling between V impurities was weakened.


2013 ◽  
Vol 27 (17) ◽  
pp. 1350078 ◽  
Author(s):  
H. L. TAO ◽  
Z. H. ZHANG ◽  
L. L. PAN ◽  
M. HE ◽  
B. SONG ◽  
...  

Effects of oxygen vacancy (Vo) on magnetic properties of Co -doped ZnO are investigated by first principle calculations. The calculated formation energies of Vo with different bonding to Co atom indicate that Vo prefers location near Co atom, implying a strong local interaction between the Co atom and O -vacancy. Induced by Vo, the Co -3d and O -2p valence bands upward shift towards the Fermi level, leading to the presence of additional carriers at the Fermi level. The delocalized carriers and the substitutional Co ion play a key role in the occurrence and stability of ferromagnetism of Co -doped ZnO .


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