ELECTRON-SPIN POLARIZATION IN BOTH MAGNETICALLY AND ELECTRICALLY-MODULATED NANOSTRUCTURES

2005 ◽  
Vol 12 (01) ◽  
pp. 67-74
Author(s):  
MAO-WANG LU

We theoretically investigate the spin-dependent transport properties of electrons in realistic magnetic-electric barrier nanostructures, which are produced by the deposition, on top of a heterostructure, of a metallic ferromagnetic stripe with an applied voltage. The degree of the electron-spin polarization is found to be closely associated with this voltage, although the use of applied voltage itself induces no spin polarization effect. As a positive voltage is applied to the stripe the electron-spin polarization shifts towards the low-energy region and increases; it shifts towards the high-energy direction and reduces for a negative applied voltage. These results shown in this work imply that the degree of electron-spin polarization can be tuned by means of an applied voltage on the stripes of system, which may result in a practical voltage-controlled spin filter.

2005 ◽  
Vol 83 (3) ◽  
pp. 219-227
Author(s):  
Mao-Wang Lu

We investigate theoretically the spin-dependent transport properties of electrons in realistic magnetic-electric-barrier (MEB) nanostructures produced by the deposition, onto a heterostructure, of a metallic ferromagnetic stripe. We find the degree of electron-spin polarization to be closely tied to the voltage applied to the stripe, despite the fact that this voltage in itself induces no spin-polarization effect. As a positive (negative) voltage is applied, the electron-spin polarization shifts in the low- (high-) energy direction and increases (decreases). Our results imply that the degree of electron-spin polarization can be tuned through the applied voltage. This implication might prove useful in the design and application of spintronic devices based on magnetic-barrier nanostructures. PACS Nos.: 73.40.Gk, 73.23.-b, 75.70.Cn


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