scholarly journals Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filtering

2021 ◽  
Author(s):  
Yuqing Huang ◽  
Ville Polojärvi ◽  
Satoshi Hiura ◽  
Pontus Höjer ◽  
Arto Aho ◽  
...  
Keyword(s):  
Spin Polarization ◽  
Electron Spin ◽  
Room Temperature ◽  
Electron Spin Polarization ◽  
Semiconductor Nanostructure ◽  
Temperature Electron ◽  
Spin Filtering

TUNABLE ELECTRON-SPIN POLARIZATION BY δ-POTENTIAL IN LAYERED SEMICONDUCTOR NANOSTRUCTURE

2021 ◽  
Author(s):  
YONG-HONG KONG ◽  
AI-HUA LI ◽  
YAN-JUN GONG ◽  
XI FU
Keyword(s):  
Spin Polarization ◽  
Electron Spin ◽  
Atomic Layer ◽  
Electron Spin Polarization ◽  
Spin Orbit Coupling ◽  
Layered Semiconductor ◽  
Semiconductor Nanostructure ◽  
Rashba Spin ◽  
Device Applications ◽  
Spintronics Device

We theoretically explore how to control electron-spin polarization in layered semiconductor nanostructure (LSN) by a [Formula: see text]-potential realized by atomic-layer doping. Due to Rashba spin-orbit coupling, a considerable spin polarization still remains even through a [Formula: see text]-potential is embedded in the LSN. Spin polarization ratio can be controlled by altering weight or position of [Formula: see text]-potential. Based on such an LSN, a structurally-tunable electron-spin filter may be obtained for spintronics device applications.

BIAS-TUNABLE ELECTRON-SPIN POLARIZATION IN HYBRID FERROMAGNETIC-SCHOTTKY-STRIPE AND SEMICONDUCTOR NANOSTRUCTURE

2010 ◽  
Vol 24 (11) ◽  
pp. 1069-1077 ◽  
Author(s):  
SAI-YAN CHEN ◽  
MAO-WANG LU ◽  
YI TANG ◽  
GUI-LIAN ZHANG
Keyword(s):  
Numerical Simulations ◽  
Spin Polarization ◽  
Electron Spin ◽  
Potential Application ◽  
Normal Metal ◽  
Electron Spin Polarization ◽  
Spin Filter ◽  
Semiconductor Nanostructure ◽  
Semiconductor Heterostructure ◽  
Tunable Spin Filter

Recently, an electron-spin filter was proposed by depositing a nanosized ferromagnetic metal stripe and a Schottky normal metal stripe on the top of the semiconductor heterostructure [F. Zhai, H. Q. Xu and Y. Guo, Phys. Rev. B70 (2004) 085308]. This device has a considerable electron-spin polarization and potential application in spintronics. Here we apply a bias to this device and theoretically demonstrate how to manipulate its electron-spin polarization. By numerical simulations, we found that not only the amplitude of the electron-spin polarization but also its sign varies with the bias, giving rise to a bias-tunable spin filter device.

scholarly journals The Hanle effect and electron spin polarization in InAs/GaAs quantum dots up to room temperature

2012 ◽  
Vol 23 (13) ◽  
pp. 135705 ◽  
Author(s):  
J Beyer ◽  
I A Buyanova ◽  
S Suraprapapich ◽  
C W Tu ◽  
W M Chen
Keyword(s):  
Quantum Dots ◽  
Spin Polarization ◽  
Electron Spin ◽  
Room Temperature ◽  
Electron Spin Polarization ◽  
Hanle Effect
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