EFFECT OF ANTIMONY AND FLUORINE DOPING ON ELECTRICAL, OPTICAL AND STRUCTURAL PROPERTIES OF TIN OXIDE FILMS PREPARED BY SPRAY PYROLYSIS METHOD

2006 ◽  
Vol 13 (04) ◽  
pp. 357-364 ◽  
Author(s):  
K. S. SHAMALA ◽  
L. C. S. MURTHY ◽  
K. NARASIMHA RAO
Keyword(s):  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Spray Pyrolysis Technique ◽  
Oxide Films ◽  
Ammonium Fluoride ◽  
Alcoholic Solution ◽  
Spray Pyrolysis Method ◽  
Electron Conduction ◽  
Tin Oxide Films

Undoped, antimony doped and fluorine doped tin oxide films have been prepared by spray pyrolysis technique. The films were deposited on glass substrates at temperatures ranging between 300°C and 370°C by spraying an alcoholic solution of tin tetra chloride ( SnCl 4). Dopants used were antimony tri chloride ( SbCl 3) for antimony doped tin oxide (ATO) films, and ammonium fluoride ( NH 4 F ) for fluorine doped tin oxide (FTO) films. Among undoped tin oxide films, the least resistivity was found to be 3.1 × 10-3 Ω-cm for a molar concentration of 0.75 M. In case of antimony doped films minimum resistivity value was found to be 7.7 × 10-4 Ω-cm for a film with ( Sb / Sn ) = 0.065, deposited at 370°C and in case of fluorine doped films it was found to be 1.67 × 10-3 Ω-cm for a doping percentage of 3 at% of fluorine in 0.1 M solution. The corresponding values of the carrier concentrations were found to be 1.8 × 1020/cm3 and 9.98 × 1020/cm3, respectively. The electrical and optical properties of these films were studied as a function of both doping concentration and substrate temperature. Doping percentage of antimony and fluorine in the spray solution has been optimized for achieving a minimum electrical resistivity. The dependence of electrical properties such as resistivity, carrier concentration and mobility of doped films were analyzed. Influence of antimony dopant on the optical band gap of the films has been reported on the basis of electron conduction mechanism. Air and argon annealing effects on the electrical properties of antimony doped tin oxide films were also studied.

Fluoride and Antimony-Doped Tin Oxide Film by Spray Pyrolysis

2008 ◽  
Vol 55-57 ◽  
pp. 513-516 ◽  
Author(s):  
R. Buntem ◽  
P. Kraisingdecha ◽  
W. Sadee
Keyword(s):  
Oxide Film ◽  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Light Transmission ◽  
Spray Pyrolysis Technique ◽  
Oxide Films ◽  
Precursor Solution ◽  
Ammonium Fluoride ◽  
Tin Chloride ◽  
Tin Oxide Films

Thin films of undoped, fluoride- and antimony- doped tin oxide on glass were prepared by spray pyrolysis technique. The aerosols were atomized from precursor solution by a commercial ultrasonic generator. Tin chloride(SnCl2.2H2O), ammonium fluoride (NH4F), and antimony chloride (SbCl3) were used as a source for tin, fluoride, and antimony respectively. For the undoped tin oxide film, the solution of 0.8 M tin chloride was used as a precursor solution. While fluoride-doped tin oxide films (FTO), the solution of 0.8 M SnCl2.2H2O in ethanol and varying amounts of NH4F dissolved in 0.2 M HCl (0.6 mL) were used as a precursor solution. The doping concentrations of NH4F were 0, 0.2, 0.3, 0.4, 0.5 and 0.6 M. For the antimony- doped tin oxide films (ATO), the doping concentrations of SbCl3 dissolved in butanol (10 mL) are 0, 0.016, 0.032, 0.048, 0.064 and 0.080 M. The aerosols were sprayed on the hot glass substrates by air at a flow rate of 1 L/minute through a PVC and glass tubing for 20 minutes for every solution. Substrate temperature was kept at 320 ± 15 °C for undoped and fluoride-doped tin oxide films and at 390 ± 20 °C for antimony- doped tin oxide films. The electrical and optical properties of the films were characterized by four-point probe measurement and UV/VIS spectrophotometer. The best FTO film exhibits the resistivity of 53.83 W-cm and the light transmission of 88.18%. While the best ATO exhibits the resistivity of 61.03 W-cm and the light transmission of 86.45%.

Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films

2018 ◽  
Vol 52 (9) ◽  
pp. 1118-1122 ◽  
Author(s):  
A. V. Sitnikov ◽  
O. V. Zhilova ◽  
I. V. Babkina ◽  
V. A. Makagonov ◽  
Yu. E. Kalinin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Tin Oxide ◽  
Oxide Films ◽  
Tin Oxide Films

scholarly journals Structural, Morphological and Optical Characterization of SnO2:F Thin Films Prepared by Chemical Spray Pyrolysis

2013 ◽  
Vol 18 ◽  
pp. 90-102 ◽  
Author(s):  
Salam Amir Yousif ◽  
Jenan Mohamed Abass
Keyword(s):  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Spray Pyrolysis Technique ◽  
Quartz Substrate ◽  
Visible Region ◽  
Ammonium Fluoride ◽  
Chemical Spray Pyrolysis ◽  
Fluorine Doping ◽  
Diffraction Patterns ◽  
D Values

Fluorine doped tin oxide (FTO) films were successfully prepared on glass and quartz substrate at a substrate temperature equal to 450 °C for different fluorine doping (0, 0.05, 0.1, 0.15) by a homemade spray pyrolysis technique. The spray solution prepared from tin tetrachloride pentahydrate (SnCl4 · 5H2O) dissolved in distilled water at (0.1 M) concentration and ammonium fluoride (NH4F) was added into the solution for fluorine doping. X-ray diffraction patterns of the spray-deposited (SnO2: F) films for different fluorine doping show that all the diffractograms contain the characteristic SnO2 orientations. The matching of the observed and standard d-values confirm that the deposited films are of tin oxide with tetragonal structure and the films are polycrystalline with (110) as a preferred growth orientation. The surface morphology of SnO2: F thin film has been examined by atomic force microscopy (AFM). The average transmittance in the visible region (at 550 nm) has been found (40%, 47%, 52%, 59%, 61%) for the fluorine doping (0, 0.05, 0.1, 0.15, 0.2) respectively.

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