A SCANNING TUNNELING MICROSCOPY STUDY OF MONOLAYER AND BILAYER TRANSITION-METAL DICHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY

2018 ◽  
Vol 25 (Supp01) ◽  
pp. 1841002
Author(s):  
MAOHAI XIE ◽  
JINGLEI CHEN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transition Metal ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Structural Phase ◽  
Transition Metal Dichalcogenides ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Transition Metal Dichalcogenide ◽  
Tunneling Microscopy

This review presents an account of some recent scanning tunneling microscopy and spectroscopy (STM/S) studies of monolayer and bilayer transition-metal dichalcogenide (TMD) films grown by molecular-beam epitaxy (MBE). In addition to some intrinsic properties revealed by STM/S, defects such as inversion domain boundaries and point defects, their properties and induced effects, are presented. More specifically, the quantum confinement and moiré potential effects, charge state transition, quasi-particle interference and structural phase transition as revealed by STM/S are described.

Scanning Tunneling Microscopy Study of Cr-doped GaN Surface Grown by RF Plasma Molecular Beam Epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Muhammad B. Haider ◽  
Rong Yang ◽  
Hamad Al-Brithen ◽  
Costel Constantin ◽  
Arthur R. Smith ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Rf Plasma ◽  
Tunneling Microscopy ◽  
A Value ◽  
Cr Concentration

AbstractCr doped GaN was grown by rf N-plasma molecular beam epitaxy on sapphire(0001) at a sample temperature of 700 °C. Cr/Ga flux ratio was set to a value from 5% to 20%. Subsequently, scanning tunneling microscopy was performed on these surfaces. Cr incorporates on the GaN surface at 700 °C at a Cr concentration of 5% and less. By increasing the Cr/Ga flux ratio to 20% in CrGaN, linear nano structures were formed on the surface, which were not observed on the bare GaN surface. The RHEED and STM studies reveal that Cr atoms form 3×3 reconstruction when 0.1 ML of Cr was deposited at room temperature on 1×1 adlayer of Ga on GaN(000-1). Cr substitutes Ga on the surface when deposited at 700 °C on the MBE grown GaN(000-1) surface for all the experiments which we have performed provided the Cr concentration is low (∼5%).

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