molecular beam epitaxy chamber Latest Research Papers

ABSTRACTThe structure of Al/GaAs interfaces was investigated by high resolution electron microscopy. The Al layers Were deposited in a molecular beam epitaxy chamber with a vacuum base pressure of <1×10∼8 Pa. The GaAs substrate temperature varied during Al deposition from -30°C to 400°C. Deposition of Al on cold substrates £25°C resulted in epitaxial growth of (001) Al on (001) GaAs. Droplets of Ga were observed in samples with the substrate temperature at -30°C (1×2) and 0°C (c(2×8)). Postannealing of the last sample caused formation of the AlGaAs phase. Deposition of Al on hot substrates (150°C and 400°C) resulted in the formation of the AlGaAs phase, which separated (110) oriented Al from (001)GaAs.

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A large aluminum alloy molecular beam epitaxy chamber with an ultimate pressure of 7.5×10−12 Torr

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.572890 ◽

1985 ◽

Vol 3 (6) ◽

pp. 2200-2204 ◽

Cited By ~ 7

Author(s):

J. R. Chen ◽

K. Narushima ◽

M. Miyamoto ◽

H. Ishimaru

Keyword(s):

Aluminum Alloy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ultimate Pressure ◽

Molecular Beam Epitaxy Chamber

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molecular beam epitaxy chamber
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Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination

Structure and peculiarities of the (8 × n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: A scanning tunneling microscopy study

In situ observations of nucleation and coalescence stages in Ge growth on Si surfaces using transmission electron microscope combined with molecular beam epitaxy chamber

Selective area etching of III–V semiconductors using TDMAAs and TDMASb in metalorganic molecular beam epitaxy chamber

Etching of GaSb with trisdimethylaminoantimony and triisopropylantimony in a metalorganic molecular beam epitaxy chamber

In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic

Connection of a Scanning Tunneling Microscope with a Molecular Beam Epitaxy Chamber and Analysis of the Vibration Isolation System

Substrate temperature measurement in a molecular beam epitaxy chamber usingin situGaAs photoluminescence monitoring

The Structure of Al/GaAs Interfaces

A large aluminum alloy molecular beam epitaxy chamber with an ultimate pressure of 7.5×10−12 Torr

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molecular beam epitaxy chamberRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination

Structure and peculiarities of the (8 × n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: A scanning tunneling microscopy study

In situ observations of nucleation and coalescence stages in Ge growth on Si surfaces using transmission electron microscope combined with molecular beam epitaxy chamber

Selective area etching of III–V semiconductors using TDMAAs and TDMASb in metalorganic molecular beam epitaxy chamber

Etching of GaSb with trisdimethylaminoantimony and triisopropylantimony in a metalorganic molecular beam epitaxy chamber

In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic

Connection of a Scanning Tunneling Microscope with a Molecular Beam Epitaxy Chamber and Analysis of the Vibration Isolation System

Substrate temperature measurement in a molecular beam epitaxy chamber usingin situGaAs photoluminescence monitoring

The Structure of Al/GaAs Interfaces

A large aluminum alloy molecular beam epitaxy chamber with an ultimate pressure of 7.5×10−12 Torr

molecular beam epitaxy chamber
Recently Published Documents