INFLUENCE OF A TIP/SAMPLE INTERACTION ON SCANNING TUNNELING SPECTROSCOPY DATA
1995 ◽
Vol 02
(02)
◽
pp. 219-223
◽
Keyword(s):
The electronic states and the tunnel current for the W/Si and W/Al tip/sample systems were calculated by the first-principles discrete-variational method of the local-density approximation. It was found that the local-electronic structure of the Si surface resembles that of a free sample even for the tip/sample distances of 2–3 Å. The electronic structure of the Al surface is more sensitive to the tip/sample interaction and approaches the free surface form when the tip/sample distance is larger than 4 Å. The local density of states of the W tip also depends on the tip/sample distance and must be taken into account in the tunnel-current calculations and in the interpretations of the STS data.
1998 ◽
Vol 13
(9)
◽
pp. 2389-2395
◽
1987 ◽
Vol 26
(S3-1)
◽
pp. 627
◽
2006 ◽
Vol 21
(11)
◽
pp. 2835-2840
◽
2003 ◽
Vol 16
(1)
◽
pp. 121-128
◽
1999 ◽
Vol 13
(29n31)
◽
pp. 3560-3565
◽
2010 ◽
Vol 24
(1-2)
◽
pp. 481-484