BROAD BAND MID-INFRARED THz PULSE: MEASUREMENT TECHNIQUE AND APPLICATIONS

1999 ◽  
Vol 08 (01) ◽  
pp. 89-105 ◽  
Author(s):  
P. Y. HAN ◽  
G. C. CHO ◽  
X.-C. ZHANG

We present in this article the recent development of the measurement technique for coherent free-space THz field and applications in the mid-infrared range. The technique is based on the second-order nonlinear optical interaction both for the generation and for the detection of THz pulse. Particularly the detection process based on free-space electro-optic sampling gives us a possibility to timely trace directly the ultrabroad band coherent THz field unparalleled by other technique. Using an ultrashort laser pulse our measurement system is feasible to measure the ultrashort THz pulse with a bandwidth up to 40 THz. We present a detailed comparative study on the generation and detection using different nonlinear material. We demonstrate applications of the coherent THz technique for time-resolved semiconductor spectroscopy, time-domain imaging with high spatial resolution and broad band refractive and absorptive characterization of material in the mid-infrared range.

2017 ◽  
Vol 917 ◽  
pp. 052019 ◽  
Author(s):  
G A Gusev ◽  
A N Sofronov ◽  
D A Firsov ◽  
L E Vorobjev ◽  
A V Babichev ◽  
...  

2004 ◽  
Vol 21 (11) ◽  
pp. 2295-2297 ◽  
Author(s):  
Zhang Liang-Liang ◽  
Zhao Guo-Zhong ◽  
Zhong Hua ◽  
Hu Ying ◽  
Zhang Cun-Lin

2001 ◽  
Vol 71 (2-6) ◽  
pp. 339-354 ◽  
Author(s):  
K.B. Fournier ◽  
B.K.F. Young ◽  
S.J. Moon ◽  
M.E. Foord ◽  
D.F. Price ◽  
...  

2004 ◽  
Vol 817 ◽  
Author(s):  
Alexander M. Grishin ◽  
Sergey I. Khartsev

AbstractWe report electro-optic performance of highly polar axis oriented Na0.5K0.5NbO3(NKN) films grown directly on Pt(100nm)/Ti(10nm)/SiO2/Si(001) substrates by rf-magnetron sputtering. Semitransparent gold electrodes (diameter Ø= 2 mm) were deposited ontop the NKN films by a thermal evaporation through the contact mask. Processing parameters have been specially optimized to obtain “electrosoft” NKN films with a non-linear fatigue-free P-E characteristics: low remnant Pr = 3.6 μC/cm2 and high induced polarization P = 26 μC/cm2 @ 522 kV/cm, and the coercive field Ec= 39 kV/cm. Electro-optical characterization of NKN/Pt/Si films has been performed using waveguide refractometry: a free-space coupling of a light beam into the thin-film waveguide modes. Intensity of TM- andTE-polarized light of 670 nm laser diode reflected from the free surface of NKN film and Au-cladding NKN/Pt/Si waveguide was recorded at zero and 30 V (100 kV/cm) bias electric field. Extraordinary and ordinary refractive indices as well as electro-optic coefficient have been determined by fitting these experimental data to the Fresnel formulas. Applying 160 V (530 kV/cm) across the parallel plate NKN capacitor (Ø= 2 mm, thickness 3 μm), modulation of the reflected light as high as 40% was achieved.


2012 ◽  
Vol 51 (19) ◽  
pp. 4457 ◽  
Author(s):  
Huimin Yue ◽  
Lei Song ◽  
Zexiong Hu ◽  
Hongxiang Liu ◽  
Yong Liu ◽  
...  

PIERS Online ◽  
2005 ◽  
Vol 1 (2) ◽  
pp. 128-132 ◽  
Author(s):  
Habiba Hafdallah Ouslimani ◽  
Redha Abdeddaim ◽  
Alain Priou

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