Simulation of optical triode based on PT symmetric structure under electro-optic modulation

In modern microwave and optical communication systems, it is urgent to develop optical components with the same performance as electronic components. In this paper, a PT-symmetric structure including electro-optical medium is designed to construct optical triode. It is found that the structure has a pole effect of amplification under certain parameters. The frequency of the incident wave at the pole is taken as the carrier frequency, and the electrical signal is modulated into an optical signal. By setting the bias electric field, the modulated optical signal can be amplified in phase and out phase, and even by doubling frequency, and a new optical triode model is obtained. The designed model will play an important role in the design of optical integrated devices.

Enhancing responses of Lamb waves to bias electric fields by flexoelectricity

In this work, responses of Lamb waves to a bias electric field in a nanoplate with the consideration of piezoelectricity, flexoelectricity, and strain gradient elasticity are investigated. Firstly, governing equations and boundary conditions of acoustic waves propagating in bias fields are derived. Then, dispersion equations under a bias electric field are obtained and solved numerically. Numerical solutions indicate that flexoelectricity can enhance the response of Lamb waves to external bias electric fields. It is also found that the competition between flexoelectricity and strain gradient elasticity leads to a complex variation of the voltage sensitivity with respect to the wavelength and frequency of Lamb waves. Our work may provide a way of resolving the contradiction between high sensitivity and miniaturization in the conventional voltage sensors based on surface acoustic waves. The theoretical results can guide a new design of voltage sensors with high sensitivity.

Generation of sequences of strong electric monopulses in nitride films

This paper presents theoretical investigation of the excitation of the sequences of strong nonlinear monopulses of space charge waves from input small envelope pulses with microwave carrier frequencies due to the negative differential conductivity in n-GaN and n-InN films. The stable numerical algorithms have been used for nonlinear 3D simulations. The sequences of the monopulses of the strong electric field of 3 - 10 ps durations each can be excited. The bias electric field should be chosen slightly higher than the threshold values for observing the negative differential conductivity. The doping levels should be moderate 1016 -1017 cm-3in the films of ? 2 mm thicknesses. The input microwave carrier frequencies of the exciting pulses of small amplitudes are up to 30 GHz in n-GaN films, whereas in n-InN films they are lower, up to 20 GHz. The sequences of the electric monopulses of high peak values are excited both in the uniform nitride films and in films with non-uniform conductivity. These nonlinear monopulses in the films differ from the domains of strong electric fields in the bulk semiconductors. In the films with non-uniform doping the nonlinear pulses are excited due to the inhomogeneity of the electric field near the input end of the film and the output nonlinear pulses are rather domains.

Multi-Energy Valley Scattering Characteristics for a SI-GaAs-Based Terahertz Photoconductive Antenna in Linear Mode

In this paper, the relationship between the terahertz radiation and the spatial distribution of photogenerated carriers under different bias electric field is studied. Terahertz pulses and the photocurrent of SI-GaAs photoconductive antenna are measured by the terahertz time-domain spectroscopy system. The occupancy rate for photogenerated carriers for different energy valleys is obtained by comparing the photocurrent of terahertz field integrating with respect to time with the photocurrent measured by oscilloscope. Results indicate that 93.04% of all photogenerated carriers are located in the Γ valley when the bias electric field is 3.33 kV/cm, and 68.6% of all photogenerated carriers are transferred to the satellite valley when the bias electric field is 20.00 kV/cm. With the bias electric field increasing, the carrier occupancy rate for the satellite valley tends to saturate at 72.16%. In order to obtain the carrier occupancy rate for the satellite valley and saturate value at the high bias electric field, an ensemble Monte Carlo simulation based on the theory of photo-activated charge domain is developed.