ORGANIC SEMICONDUCTOR MICRO-PILLAR PROCESSED BY FOCUSED ION BEAM MILLING

2005 ◽  
Vol 03 (supp01) ◽  
pp. 223-228 ◽  
Author(s):  
WEN-CHANG HUNG ◽  
A. ADAWI ◽  
A. TAHRAOUI ◽  
A. G. CULLIS

In order to control light, different strategies have been applied by placing an optically active medium into a semiconductor resonator and certain applications such as LEDs and laser diodes have been commercialized for many years. The possibility of nanoscale optical applications has created great interesting for quantum nanostructure research. Recently, single photon emission has been an active area of quantum dot research. A quantum dot is place between distributed Bragg reflectors (DBRs) within a micro-pillar structure. In this study, we shall report on an active layer composed of an organic material instead of a semiconductor. The micro-pillar structure is fabricated by a focused ion beam (FIB) micro-machining technique. The ultimate target is to achieve a single molecule within the micro-pillar and therefore to enable single photon emission. Here, we demonstrate some results of the fabrication procedure of a 5 micron organic micro-pillar via the focused ion beam and some measurement results from this study. The JEOL 6500 dual column system equipped with both electron and ion beams enables us to observe the fabrication procedure during the milling process. Furthermore, the strategy of the FIB micro-machining method is reported as well.

2020 ◽  
Author(s):  
Elmar Mitterreiter ◽  
Bruno Schuler ◽  
Katja Barthelmi ◽  
Katherine Cochrane ◽  
Jonas Kiemle ◽  
...  

Abstract For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab-initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Elmar Mitterreiter ◽  
Bruno Schuler ◽  
Ana Micevic ◽  
Daniel Hernangómez-Pérez ◽  
Katja Barthelmi ◽  
...  

AbstractFor two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS2. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.


APL Materials ◽  
2021 ◽  
Vol 9 (6) ◽  
pp. 061106
Author(s):  
M. J. Holmes ◽  
T. Zhu ◽  
F. C.-P. Massabuau ◽  
J. Jarman ◽  
R. A. Oliver ◽  
...  

2008 ◽  
Vol 25 (9) ◽  
pp. 3231-3233 ◽  
Author(s):  
Dou Xiu-Ming ◽  
Sun Bao-Quan ◽  
Chang Xiu-Ying ◽  
Xiong Yong-Hua ◽  
Huang She-Song ◽  
...  

2006 ◽  
Vol 32 (1-2) ◽  
pp. 144-147 ◽  
Author(s):  
Hidekazu Kumano ◽  
Satoshi Kimura ◽  
Michiaki Endo ◽  
Ikuo Suemune ◽  
Hirotaka Sasakura ◽  
...  

2002 ◽  
Vol 3 (4) ◽  
pp. 501-508 ◽  
Author(s):  
François Treussart ◽  
Romain Alléaume ◽  
Véronique Le Floc'h ◽  
Jean-François Roch

2014 ◽  
Vol 105 (14) ◽  
pp. 141109 ◽  
Author(s):  
Saniya Deshpande ◽  
Thomas Frost ◽  
Arnab Hazari ◽  
Pallab Bhattacharya

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