SORTING SEMICONDUCTING SINGLE-WALLED CARBON NANOTUBES AND USING THEM AS RANDOM NETWORK OF FIELD-EFFECT TRANSISTORS

NANO ◽  
2014 ◽  
Vol 09 (04) ◽  
pp. 1450055 ◽  
Author(s):  
LINGLI ZHANG ◽  
XIAOYONG PAN ◽  
WEIZHI WANG
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Random Network ◽  
Hole Mobility ◽  
Single Walled Carbon Nanotubes ◽  
Optical Absorbance ◽  
Single Walled Carbon ◽  
Active Channels ◽  
Walled Carbon Nanotubes

Single-walled carbon nanotubes (SWCNTs) with incovalently attached iodine, were obtained by physical absorption. The different diameter sizes of SWCNTs, with different numbers of iodine molecule, enhance the density contrast between them which becomes evident in density gradient ultracentrifugation (DGU) targeted to sort certain species of SWCNTs. The results of optical absorbance and photoluminescence emission showed that iodine-assisted DGU preferentially separates semiconducting nanotubes with certain diameters [(6, 5), (7, 5), (8, 4), and (7, 6)].We have applied these semiconducting, species enriched SWCNTs to prepare solution-processed field effect transistor (FET) devices with random nanotube network active channels. The devices exhibit stable p-type semiconductor behavior in air with very promising characteristics. The on-off current ratio reaches up to 2 × 104 within a narrow window of voltage (-10 V to 10 V), and estimated hole mobility of 21.7 cm2 V-1 s-1.

Fabrication of Carbon Nanotube Field-Effect Transistors with Metal and Semiconductor Electrodes

2007 ◽  
Vol 1057 ◽  
Author(s):  
Himani Sharma ◽  
Zhigang Xiao
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Bismuth Telluride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Back Side ◽  
Single Walled Carbon ◽  
Lift Off ◽  
Walled Carbon Nanotubes

ABSTRACTCarbon nanotube field-effect transistors (CNTFETs) were fabricated with metal material (gold) and semiconductor material (bismuth telluride) as the source and drain materials. Highly-purified HiPCO-grown single-walled carbon nanotubes (CNTs) from Carbon Nanotechnologies, Inc. (CNI) were used for the fabrication of CNTFETs. The single-walled carbon nanotubes were ultrasonically dispersed in toluene and dimethylformamide (DMF) with trifluoroacetic acid (TFA), as co-solvent. Dielectrophoresis (DEP) method was used to deposit, align, and assemble carbon nanotubes (CNTs) to bridge the gap between the source and drain of CNTFETs to form the channel. The structure of CNTFET is similar to a conventional field-effect transistor with substrate acting as a back-side gate. Electron-beam evaporation was used to deposit gold and bismuth telluride thin films. Microfabrication techniques such as photolithography, e-beam lithography, and lift-off process were used to define and fabricate the source, drain, and gate of CNTFETs. The gap between the source and drain varied from 800 nm to 3 µm. The drain-source current (IDS) of the fabricated CNTFETs versus the drain-source voltage (VDS) and the gate voltage (VG) was characterized. It was found that in the case of gold (Au) electrodes, the IV curves of CNTFETs clearly show behavior of the CNT (metallic or semiconducting) aligned across the source and drain of CNTFETs, while in the case of bismuth telluride (Bi2Te3) electrodes, the I-V curves are less dependent on the type of CNTs (metallic or semiconducting). The developed carbon nanotube field-effect transistors (CNTFETs) can be a good candidate for the application of nanoelectronics and integrated circuits with a high mobility and fast switching.

80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

2009 ◽  
Vol 94 (24) ◽  
pp. 243505 ◽  
Author(s):  
L. Nougaret ◽  
H. Happy ◽  
G. Dambrine ◽  
V. Derycke ◽  
J. -P. Bourgoin ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
High Purity ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes
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