Photo-Electrical Properties of Trilayer MoSe2 Nanoflakes

NANO ◽  
2016 ◽  
Vol 11 (07) ◽  
pp. 1650082 ◽  
Author(s):  
Yang Hang ◽  
Qi Li ◽  
Wei Luo ◽  
Yanlan He ◽  
Xueao Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Near Infrared ◽  
High Detection Rate ◽  
Infrared Wavelength ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Photo Response ◽  
Effect Transistor

The photo-electrical properties of trilayer MoSe2 nanoflakes, fabricated by mechanical exfoliation, were systematically studied in this paper. The trilayer MoSe2 nanoflakes are n-type and possess a high gate modulation (On/Off ratio is larger than 10[Formula: see text] and a relatively high carrier mobility (1.79[Formula: see text]cm[Formula: see text]. The field effect transistor (FET) device of MoSe2 shows sensitive photo response, high photoresponsivity ([Formula: see text][Formula: see text]mA/W), quick response time ([Formula: see text][Formula: see text]ms), high external quantum efficiency ([Formula: see text] and high detection rate ([Formula: see text] for red and near-infrared wavelength. These results showed that the device based on few-layer MoSe2 nanoflakes exhibited good photo-electrical properties, which might open a new way to develop few-layer MoSe2-based material in the application of FETs and optoelectronics.

Ultra-sensitive near-infrared graphene photodetectors with nanopillar antennas

Nanoscale ◽  
2017 ◽  
Vol 9 (44) ◽  
pp. 17459-17464 ◽  
Author(s):  
Yu Liu ◽  
Wen Huang ◽  
Tianxun Gong ◽  
Yue Su ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Absorption Spectrum ◽  
Carrier Mobility ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Broad Absorption ◽  
High Carrier Mobility ◽  
High Carrier

Graphene has been demonstrated as a candidate for optoelectronic devices due to its broad absorption spectrum and ultra-high carrier mobility.

Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)

2006 ◽  
Vol 527-529 ◽  
pp. 1549-1552 ◽  
Author(s):  
Sang Kwon Lee ◽  
Han Kyu Seong ◽  
Ki Chul Choi ◽  
Nam Kyu Cho ◽  
Heon Jin Choi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Semiconductor Nanowires ◽  
Electrical Devices ◽  
Gan Nanowire ◽  
Effect Transistor

We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8×8 mm2 silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 ∼ 70 cm2/V⋅s. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.

scholarly journals Silicon Meet Graphene for a New Family of Near-Infrared Schottky Photodetectors

2019 ◽  
Author(s):  
Maurizio Casalino
Keyword(s):  
Carrier Mobility ◽  
Near Infrared ◽  
Strong Light ◽  
Broadband Absorption ◽  
New Family ◽  
High Carrier Mobility ◽  
Light Matter Interaction ◽  
High Carrier ◽  
Schottky Junctions

In recent years graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions opening the path to the realization of near-infrared silicon photodetectors based on the internal photoemission effect where graphene play the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.

scholarly journals Conductive Metallophthalocyanine Framework Films with High Carrier Mobility as Efficient Chemiresistors

2021 ◽  
Author(s):  
Hong-Cai Zhou ◽  
Yan Yue ◽  
Peiyu Cai ◽  
Xiaoyi Xu ◽  
Hanying Li ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
High Carrier Mobility ◽  
High Carrier

scholarly journals Conductive Metallophthalocyanine Framework Films with High Carrier Mobility as Efficient Chemiresistors

2021 ◽  
Vol 60 (19) ◽  
pp. 10806-10813
Author(s):  
Yan Yue ◽  
Peiyu Cai ◽  
Xiaoyi Xu ◽  
Hanying Li ◽  
Hongzheng Chen ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
High Carrier Mobility ◽  
High Carrier

Auxetic, flexible, and strain-tunable two-dimensional th-AlN for photocatalytic visible light water splitting with anisotropic high carrier mobility

2021 ◽  
Vol 9 (14) ◽  
pp. 4971-4977
Author(s):  
Mehmet Emin Kilic ◽  
Kwang-Ryeol Lee
Keyword(s):  
Optical Properties ◽  
Visible Light ◽  
Water Splitting ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Light Water ◽  
Photocatalytic Water Splitting ◽  
Electronic And Optical Properties ◽  
High Carrier Mobility ◽  
High Carrier

Tetrahexagonal AlN: a novel two-dimensional family for photocatalytic water splitting with exceptional mechanical, electronic, and optical properties.

scholarly journals High carrier mobility and ultralow thermal conductivity in the synthetic layered superlattice Sn4Bi10Se19

2021 ◽  
Author(s):  
Ruiming Lu ◽  
Alan Olvera ◽  
Trevor Bailey ◽  
Jiefei Fu ◽  
Xianli Su ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Crystal Lattice ◽  
Carrier Mobility ◽  
Complex Materials ◽  
High Carrier Mobility ◽  
High Carrier

The integration within the same crystal lattice of two or more structurally and chemically distinct building units enables the design of complex materials featuring the coexistence of dissimilar functionalities. Here...

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