High Carrier Mobility and Environmentally stable Microporous Zeolite Imidazolate Framework (ZIF-67): A Field-Effect Transistor (FET) Approach

2021 ◽  
pp. 138690
Author(s):  
Pasha W. Sayyad ◽  
Aafiya A. Farooqui ◽  
Nikesh N. Ingle ◽  
Theeazen Al-Gahouari ◽  
Gajanan A. Bodkhe ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Effect Transistor ◽  
Microporous Zeolite

Photo-Electrical Properties of Trilayer MoSe2 Nanoflakes

NANO ◽  
2016 ◽  
Vol 11 (07) ◽  
pp. 1650082 ◽  
Author(s):  
Yang Hang ◽  
Qi Li ◽  
Wei Luo ◽  
Yanlan He ◽  
Xueao Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Near Infrared ◽  
High Detection Rate ◽  
Infrared Wavelength ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Photo Response ◽  
Effect Transistor

The photo-electrical properties of trilayer MoSe2 nanoflakes, fabricated by mechanical exfoliation, were systematically studied in this paper. The trilayer MoSe2 nanoflakes are n-type and possess a high gate modulation (On/Off ratio is larger than 10[Formula: see text] and a relatively high carrier mobility (1.79[Formula: see text]cm[Formula: see text]. The field effect transistor (FET) device of MoSe2 shows sensitive photo response, high photoresponsivity ([Formula: see text][Formula: see text]mA/W), quick response time ([Formula: see text][Formula: see text]ms), high external quantum efficiency ([Formula: see text] and high detection rate ([Formula: see text] for red and near-infrared wavelength. These results showed that the device based on few-layer MoSe2 nanoflakes exhibited good photo-electrical properties, which might open a new way to develop few-layer MoSe2-based material in the application of FETs and optoelectronics.

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

scholarly journals High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

AIP Advances ◽  
2013 ◽  
Vol 3 (11) ◽  
pp. 112123 ◽  
Author(s):  
Murali Gedda ◽  
Nimmakayala V. V. Subbarao ◽  
Sk. Md. Obaidulla ◽  
Dipak K. Goswami
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

Modeling the Carrier Mobility in Nanowire Channel FET

2007 ◽  
Vol 1017 ◽  
Author(s):  
Werner Prost ◽  
Kai Blekker ◽  
Quoc-Thai Do ◽  
Ingo Regolin ◽  
Sven Müller ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Static Field ◽  
Device Model ◽  
Inas Nanowires ◽  
Effect Transistor ◽  
Long Channel

AbstractWe report on the extraction of carrier type, and mobility in semiconductor nanowires by adopting experimental nanowire field-effect transistor device data to a long channel MISFET device model. Numerous field-effect transistors were fabricated using n-InAs nanowires of a diameter of 50 nm as a channel. The I-V data of devices were analyzed at low to medium drain current in order to reduce the effect of extrinsic resistances. The gate capacitance is determined by an electro-static field simulation tool. The carrier mobility remains as the only parameter to fit experimental to modeled device data. The electron mobility in n-InAs nanowires is evaluated to µ = 13,000 cm2/Vs while for comparison n-ZnO nanowires exhibit a mobility of 800 cm2/Vs.

High Carrier Mobility of Organic Field-Effect Transistors with a Thiophene–Naphthalene Mesomorphic Semiconductor

2007 ◽  
Vol 19 (14) ◽  
pp. 1864-1868 ◽  
Author(s):  
K. Oikawa ◽  
H. Monobe ◽  
K. Nakayama ◽  
T. Kimoto ◽  
K. Tsuchiya ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

scholarly journals Inkjet-Printed Organic Field-Effect Transistor by Using Composite Semiconductor Material of Carbon Nanoparticles and Poly(3-Hexylthiophene)

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chih-Ting Lin ◽  
Chun-Hao Hsu ◽  
Chang-Hung Lee ◽  
Wen-Jung Wu
Keyword(s):  
Organic Electronics ◽  
Inkjet Printing ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Low Cost ◽  
Semiconductor Material ◽  
Organic Field Effect Transistor ◽  
Organic Semiconductor Materials ◽  
Effect Transistor

Poly(3-hexylthiophene), P3HT, has been widely used in organic electronics as a semiconductor material. It suffers from the low carrier mobility characteristics. This limits P3HT to be employed in applications. Therefore, the blending semiconductor material, carbon nanoparticle (CNP), and P3HT, are developed and examined by inkjet-printing organic field-effect transistor technology in this work. The effective carrier mobility of fabricated OFETs can be enhanced by 8 folds with adding CNP and using O2plasma treatment. At the same time, the transconductance of fabricated OFETs is also raised by 5 folds. Based on the observations of SEM, XRD, and FTIR, these improvements are contributed to the local field induced by the formation of CNP/P3HT complexes. This observation presents an insight of the development in organic semiconductor materials. Moreover, this work also offers a low-cost and effective semiconductor material for inkjet-printing technology in the development of organic electronics.

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