<title>Direct growth of single-domain and twin-free CdTe(111)B on vicinal Si(001) by molecular beam epitaxy</title>

Molecular Beam Epitaxy of InGaP Films Grown on Si(001) Substrates with Various Kinds of Initial Buffer Layers

MRS Proceedings ◽

10.1557/proc-399-147 ◽

1995 ◽

Vol 399 ◽

Author(s):

H. Kawanami ◽

T. Sekigawa

Keyword(s):

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Molecular Beam ◽

Single Domain ◽

Buffer Layers ◽

Superior Surface ◽

Direct Growth ◽

Surface Morphologies ◽

Initial Buffer

ABSTRACTSingle domain InxGa(1-x)P (x=0.4) films were successfully grown on Si(001) misoriented substrates by molecular beam epitaxy with solid phosphorous source. The effects of the initial 100 nm thick interfacial buffer layer such as InGaP (i.e. direct growth without buffer layer), GaP, AJP, and GaAs were examined. Superior surface morphologies were indicated for the films with GaP, A1P, and GaAs buffer layers compared with the films on InGaP buffer layer. The results indicated the necessity of some kind of initial buffer layer different from the film.

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Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.l285 ◽

1986 ◽

Vol 25 (Part 2, No. 4) ◽

pp. L285-L287 ◽

Cited By ~ 44

Author(s):

Mitsuo Kawabe ◽

Toshio Ueda

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Single Domain ◽

Gaas On Si

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Direct Growth of [100]-Oriented High-Quality β-FeSi2 Films on Si(001) Substrates by Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l1008 ◽

2001 ◽

Vol 40 (Part 2, No. 10A) ◽

pp. L1008-L1011 ◽

Cited By ~ 34

Author(s):

Noriyoshi Hiroi ◽

Takashi Suemasu ◽

Ken'ichiro Takakura ◽

Naoki Seki ◽

Fumio Hasegawa

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

High Quality ◽

Direct Growth

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Growth of Single Domain GaAs on Si(100) by Molecular Beam Epitaxy

10.7567/ssdm.1985.b-2-5 ◽

1985 ◽

Author(s):

Seiji Nishi ◽

Masahiro Akiyama ◽

Katsuzo Kaminishi

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Single Domain ◽

Gaas On Si

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Initial Buffer Layers on the Growth of InGaP on Si by MBE

MRS Proceedings ◽

10.1557/proc-441-33 ◽

1996 ◽

Vol 441 ◽

Cited By ~ 2

Author(s):

H. Kawanami ◽

S. Ghosh ◽

I. Sakata ◽

T. Sekigawa

Keyword(s):

High Temperature ◽

Surface Structure ◽

Buffer Layer ◽

Molecular Beam ◽

Single Domain ◽

Buffer Layers ◽

Structure Control ◽

Si Substrates ◽

Direct Growth ◽

Initial Buffer

AbstractSingle domain InxGa(1-x)P (x=0.3) films were successfully grown on Si(001) misoriented substrates by molecular beam epitaxy with a solid phosphorous source. The effects of interfacial buffer layers such as InGaP (i.e. direct growth without buffer layer), GaP, AlP, and GaAs were examined. Also a Si epitaxial buffer layer was tried to control the Si surface structure. Mirror like surfaces were obtained for all films with RHEED patterns of (2×1) single domain surface structure. PL intensities for all films indicated almost the same values except for the films with a Si epitaxial buffer layer. The films with a Si epitaxial buffer layer had almost three times larger PL intensities than the films without Si epitaxial buffer layer. The results suggest incomplete cleaning of the Si surface by the high temperature (1000 °C) treatment and possibility of surface structure control for Si substrates by a Si epitaxial buffer layer.

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Reflection high energy electron diffraction and scanning tunnelling microscopy study of single-domain growth during silicon molecular beam epitaxy on Si(001)

Thin Solid Films ◽

10.1016/0040-6090(89)90451-3 ◽

1989 ◽

Vol 183 (1-2) ◽

pp. 263-271 ◽

Cited By ~ 26

Author(s):

A.J. Hoeven ◽

E.J. Van Loenen ◽

D. Dijkkamp ◽

J.M. Lenssinck ◽

J. Dieleman

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

Microscopy Study ◽

High Energy ◽

Single Domain ◽

Domain Growth ◽

High Energy Electron ◽

Scanning Tunnelling ◽

Tunnelling Microscopy

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Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy

Applied Sciences ◽

10.3390/app10020639 ◽

2020 ◽

Vol 10 (2) ◽

pp. 639

Author(s):

Minghui Gu ◽

Chen Li ◽

Yuanfeng Ding ◽

Kedong Zhang ◽

Shunji Xia ◽

...

Keyword(s):

Phase Diagram ◽

Molecular Beam Epitaxy ◽

Sapphire Substrate ◽

Molecular Beam ◽

Three Dimensional ◽

High Mobility ◽

Two Dimensional ◽

Large Area ◽

High Quality ◽

Direct Growth

Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging. In this study, we report the direct growth of antimonene on c-plane sapphire substrate while using molecular beam epitaxy (MBE). We explore the effect of growth temperature on antimonene formation and present a growth phase diagram of antimony. The effect of antimony sources (Sb2 or Sb4) and a competing mechanism between the two-dimensional (2D) and three-dimensional (3D) growth processes and the effects of adsorption and cracking of the source molecules are also discussed. This work offers a new method for growing antimonene and it provides ideas for promoting van der Waals epitaxy.

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