Metal Organic Chemical Vapor Deposition Growth of GaAs on Si Using GaAs Buffer Layer Grown by an Alternate Gas Flow of Source Materials

AbstractQuantum dots (QDs) have been shown to improve the efficiency and optical properties of opto- electronic devices compared to two dimensional quantum wells in the active region. The formation of self-assembled GaN nanostructures on aluminum nitride (AlN) grown on sapphire substrates by Metal Organic Chemical Vapor deposition (MOCVD) was explored. This paper reports on the effect ofin-situactivation in nitrogen atmosphere on MOCVD grown GaN nanostructures. The effect of introducing manganese in these nanostructures was also studied. Optically active nanostructures were successfully obtained. A blue shift is observed in the photoluminescence data with a decrease in nanostructure size.

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Controlling nucleation of monolayer WSe 2 during metal-organic chemical vapor deposition growth

2D Materials ◽

10.1088/2053-1583/3/2/025015 ◽

2016 ◽

Vol 3 (2) ◽

pp. 025015 ◽

Cited By ~ 23

Author(s):

Sarah M Eichfeld ◽

Víctor Oliveros Colon ◽

Yifan Nie ◽

Kyeongjae Cho ◽

Joshua A Robinson

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Chemical Vapor Deposition Growth ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Fourier analysis applied on in situ laser reflectometry during III-nitride metal organic chemical vapor deposition growth

Journal of Applied Physics ◽

10.1063/1.2722247 ◽

2007 ◽

Vol 101 (9) ◽

pp. 093501 ◽

Cited By ~ 3

Author(s):

C. Simbrunner ◽

H. Sitter ◽

A. Bonanni

Keyword(s):

Chemical Vapor Deposition ◽

Fourier Analysis ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Chemical Vapor Deposition Growth ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Laser Reflectometry

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RuO2 films by metal-organic chemical vapor deposition

Journal of Materials Research ◽

10.1557/jmr.1993.2644 ◽

1993 ◽

Vol 8 (10) ◽

pp. 2644-2648 ◽

Cited By ~ 54

Author(s):

Jie Si ◽

Seshu B. Desu

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gas Flow ◽

Chemical Vapor ◽

Film Structure ◽

Organic Chemical ◽

Dilute Gas ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Pure and conducting RuO2 thin films were successfully deposited on Si, SiO2/Si, and quartz substrates at temperatures as low as 550 °C by a hot wall metal-organic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)ruthenium, Ru(C5H5)2, was used as the precursor. An optimized MOCVD process for conducting RuO2 thin films was established. Film structure was dependent on MOCVD process parameters such as bubbler temperature, dilute gas flow rates, deposition temperature, and total pressure. Either pure RuO2, pure Ru, or a RuO2 + Ru mixture was obtained under different deposition conditions. As-deposited pure RuO2 films were specular, crack-free, and well adhered on the substrates. The Auger electron spectroscopy depth profile showed good composition uniformity across the bulk of the films. The MOCVD RuO2 thin films exhibited a resistivity as low as 60 μω-cm. In addition, the reflectance of RuO2 in the NIR region had a metallic character.

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