Hydrogen-Etching Effect of Substrate on Deposition of Diamond Films by DC Plasma Chemical Vapor Deposition

1991 ◽  
Vol 30 (Part 2, No. 7A) ◽  
pp. L1195-L1198 ◽  
Author(s):  
Setsuo Nakao ◽  
Mikio Noda ◽  
Hirohumi Watatani ◽  
Shigeo Maruno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Dc Plasma ◽  
Hydrogen Etching ◽  
Plasma Chemical Vapor Deposition ◽  
Etching Effect

Growth of Highly (110) Oriented Diamond Film by Microwave Plasma Chemical Vapor Deposition

2018 ◽  
Vol 281 ◽  
pp. 893-899 ◽  
Author(s):  
Yi Fan Xi ◽  
Jian Huang ◽  
Ke Tang ◽  
Xin Yu Zhou ◽  
Bing Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Nucleation Stage

In this study, we propose a simple and effective approach to enhance (110) orientation in diamond films grown on (100) Si substrates by microwave plasma chemical vapor deposition. It is found that the crystalline structure of diamond films strongly rely on the CH4 concentration in the nucleation stage. Under the same growth condition, when the CH4 concentration is less than 7% (7%) in the nucleation stage, the diamond films exhibit randomly oriented structure; once the value exceeds 7%, the deposited films are strongly (110) oriented. It could be verified by experiments that the formation of (110) orientation in diamond films are related to the high nucleation density and high fraction of diamond-like carbon existing in nucleation samples.

Diamond growth by hollow cathode arc plasma chemical vapor deposition

1998 ◽  
Vol 13 (11) ◽  
pp. 3114-3121 ◽  
Author(s):  
Gou-Tsau Liang ◽  
Franklin Chau-Nan Hong
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Hollow Cathode ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Arc Plasma ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Cathode Arc

Hollow cathode arc plasma chemical vapor deposition was employed to grow crystalline diamond films using 1.5% to 7% of methane in hydrogen. The growth rate was as high as 3.2 μ/h when using 5% CH4/H2 at a pressure of 15 Torr and a substrate temperature of 1083 K. However, an intermediate layer of several hundred nanometers was observed at the film-substrate interface by cross-section SEM. Raman and XPS characterizations showed that the interfacial layer consisted of sp2 carbon and TaC with Ta vaporized from the hot cathode tube. XRD and XPS results further showed that the deposited diamond films also contained TaC. Ta composition in the film increased with the increase of growth pressure, the reduction of substrate temperature, and the increase of H2 flow in the Ta tube. The diamond films deposited by using CHCl3 as carbon source had Ta concentrations one order of magnitude higher than those using CH4, as shown by XPS results, but the nucleation densities using CHCl3 were always higher than those using CH4.

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