Dependence of Minority-Carrier Recombination Lifetime on Surface Microroughness in Silicon Wafers

1993 ◽  
Vol 32 (Part 2, No. 12B) ◽  
pp. L1792-L1794 ◽  
Author(s):  
Hiroshi Daio ◽  
Fumio Shimura
Keyword(s):  
Minority Carrier ◽  
Silicon Wafers ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Surface Microroughness

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

3D Effects on Minority Carrier Recombination in Homogeneous Silicon Wafers

2002 ◽  
Vol T101 (1) ◽  
pp. 61
Author(s):  
J. Storg?rds ◽  
H. V?in?l? ◽  
M. Yli-Koski ◽  
J. Sinkkonen
Keyword(s):  
Minority Carrier ◽  
Silicon Wafers ◽  
Carrier Recombination ◽  
3D Effects

Detection of Nickel in Silicon by Recombination Lifetime Measurements

2007 ◽  
Vol 131-133 ◽  
pp. 183-188 ◽  
Author(s):  
Hele Savin ◽  
Marko Yli-Koski ◽  
Antti Haarahiltunen ◽  
H. Talvitie ◽  
Juha Sinkkonen
Keyword(s):  
Minority Carrier ◽  
Concentration Level ◽  
Light Illumination ◽  
Air Cooling ◽  
Recombination Activity ◽  
Lifetime Measurements ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
The Impact ◽  
Wafer Surfaces

The impact of nickel on minority carrier recombination lifetime has been studied in ptype CZ silicon using SPV and μ-PCD techniques. The results show that small oxide precipitates can be used to improve drastically the detection limit of nickel. This is explained by the decoration of oxide precipitates by nickel, which results in the enhanced recombination activity. In the absence of oxide precipitates or other related bulk microdefects nickel precipitates preferably to wafer surfaces, which does not have such a high impact on the measured recombination lifetime, at least on a low concentration level. Low temperature anneal at 180°C or light illumination of the wafers after nickel in-diffusion did not reveal any further change in lifetime in any of the wafers, which may indicate that nickel precipitates efficiently during air-cooling from high temperature.

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