Reverse temperature dependence of Ge surface segregation during Si‐molecular beam epitaxy

1991 ◽  
Vol 69 (5) ◽  
pp. 3058-3062 ◽  
Author(s):  
Kiyokazu Nakagawa ◽  
Masanobu Miyao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Surface Segregation

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

scholarly journals Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 858-863
Author(s):  
Huajie Chen ◽  
A. R. Smith ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
J. E. Northrup
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Parameters ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Group V ◽  
Group Iii ◽  
Ingan Alloys

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate

2001 ◽  
Vol 227-228 ◽  
pp. 266-270 ◽  
Author(s):  
Yasuaki Tatsuoka ◽  
Masaya Uemura ◽  
Takahiro Kitada ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Surface Migration

Surface segregation of Si in δ-doped In0.53Ga0.47As grown by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 229-233 ◽  
Author(s):  
B. Vögele ◽  
C.R. Stanley ◽  
E. Skuras ◽  
A.R. Long ◽  
E.A. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation

Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

2011 ◽  
Vol 318 (1) ◽  
pp. 450-453 ◽  
Author(s):  
Chia-Hung Lin ◽  
Ryota Abe ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Selective Growth ◽  
Metal Organic
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