Growth temperature dependence in molecular beam epitaxy of gallium arsenide

1978 ◽  
Vol 45 ◽  
pp. 302-308 ◽  
Author(s):  
T. Murotani ◽  
T. Shimanoe ◽  
S. Mitsui
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Growth Temperature Dependence

Growth Temperature Dependence of SrTiO3Thin Films by Molecular Beam Epitaxy

2005 ◽  
Vol 44 (1B) ◽  
pp. 677-680 ◽  
Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Hiroaki Kimura ◽  
Toyokazu Tambo ◽  
Chiei Tatsuyama
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Growth Temperature Dependence

Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

1989 ◽  
Vol 55 (10) ◽  
pp. 990-992 ◽  
Author(s):  
J. E. Palmer ◽  
G. Burns ◽  
C. G. Fonstad ◽  
C. V. Thompson
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Growth
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