Growth temperature dependence of low-noise MESFET in molecular-beam epitaxy

1987 ◽  
Vol 23 (1) ◽  
pp. 7-8 ◽  
Author(s):  
Y.C. Chou ◽  
C.T. Lee ◽  
C.D. Chen ◽  
K.C. Chu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Low Noise ◽  
Growth Temperature Dependence

Growth Temperature Dependence of SrTiO3Thin Films by Molecular Beam Epitaxy

2005 ◽  
Vol 44 (1B) ◽  
pp. 677-680 ◽  
Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Hiroaki Kimura ◽  
Toyokazu Tambo ◽  
Chiei Tatsuyama
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Growth Temperature Dependence

Activation of two dopants, Bi and Er in δ-doped layer in Si crystal

Nano Futures ◽  
2021 ◽  
Vol 5 (4) ◽  
pp. 045005
Author(s):  
Koichi Murata ◽  
Shuhei Yagi ◽  
Takashi Kanazawa ◽  
Satoshi Tsubomatsu ◽  
Christopher Kirkham ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Silicon Crystal ◽  
Electric Transport ◽  
Photoluminescence Study ◽  
Post Annealing ◽  
Surface Nanostructures ◽  
Doping Technique ◽  
Dopant Source

Abstract Conventional doping processes are no longer viable for realizing extreme structures, such as a δ-doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)-δ-doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The concentration of both Er and Bi dopants is controlled by adjusting the amount of deposited Er atoms, the growth temperature during Si capping and surfactant techniques. Subsequent post-annealing processing is essential in this doping technique to obtain activated dopants in the δ-doped layer. Electric transport measurement and photoluminescence study revealed that both Bi and Er dopants were activated after post-annealing at moderate temperature.

Sign in / Sign up

Export Citation Format

Share Document