Cu(InGa)Se2Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Layer Deposition

1999 ◽  
Vol 38 (Part 1, No. 9A) ◽  
pp. 4989-4992 ◽  
Author(s):  
Sutichai Chaisitsak ◽  
Takeshi Sugiyama ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Buffer Layers ◽  
High Resistivity ◽  
Layer Deposition

Atomic layer deposition of Zn1−xMgxO buffer layers for Cu(In,Ga)Se2 solar cells

2007 ◽  
Vol 15 (3) ◽  
pp. 225-235 ◽  
Author(s):  
T. Törndahl ◽  
C. Platzer-Björkman ◽  
J. Kessler ◽  
M. Edoff
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Layer Deposition

scholarly journals The Effect of ALD-Zn(O,S) Buffer Layer on the Performance of CIGSSe Thin Film Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 412
Author(s):  
Woo-Jin Choi ◽  
Wan Woo Park ◽  
Yangdo Kim ◽  
Chang Sik Son ◽  
Donghyun Hwang
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Good Control ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Glass Temperature ◽  
Layer Deposition ◽  
Pulse Ratio ◽  
First Results ◽  
Cigs Solar Cells

In this paper, we report the development of Cd-free buffers using atomic layer deposition (ALD) for Cu(In,Ga)(S,Se)2-based solar cells. The ALD process gives good control of thickness and the S/S +O ratio content of the films. The influence of the growth per cycle (GPC) and the S/(S+O) ratio, and the glass temperature of the atomic layer deposited Zn(O,S) buffer layers on the efficiency of the Cu(In,Ga)(S,Se)2 solar cells were investigated. We present the first results from our work on cadmium-free CIGS solar cells on substrates with an aperture area of 0.4 cm2. These Zn(O,S) layers were deposited by atomic layer deposition at 120 °C with S/Zn ratios of 0.7, and layers of around 30 nm. The Zn(O,S) 20% (Pulse Ratio: H2S/H2O+H2S) process results in a S/Zn ratio of 0.7. We achieved independently certified aperture area efficiencies of 17.1% for 0.4 cm2 cells.

scholarly journals Reduced interface recombination in Cu2ZnSnS4 solar cells with atomic layer deposition Zn1−xSnxOy buffer layers

2015 ◽  
Vol 107 (24) ◽  
pp. 243904 ◽  
Author(s):  
C. Platzer-Björkman ◽  
C. Frisk ◽  
J. K. Larsen ◽  
T. Ericson ◽  
S.-Y. Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Interface Recombination ◽  
Layer Deposition

Wide-Gap Cu(In,Ga)Se$_{2}$ Solar Cells with Zn(O,S) Buffer Layers Prepared by Atomic Layer Deposition

2012 ◽  
Vol 51 ◽  
pp. 10NC15 ◽  
Author(s):  
Kazuya Nakashima ◽  
Toyokazu Kumazawa ◽  
Taizo Kobayashi ◽  
Takahiro Mise ◽  
Tokio Nakada
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Layer Deposition ◽  
Wide Gap

scholarly journals Atomic layer deposition of ZnInxSy buffer layers for Cu(In,Ga)Se2 solar cells

2015 ◽  
Vol 7 (1) ◽  
pp. 013116 ◽  
Author(s):  
P. Genevée ◽  
A. Darga ◽  
C. Longeaud ◽  
D. Lincot ◽  
F. Donsanti
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Layer Deposition

Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se2 based thin film solar cells: Band alignment and sulfur gradient

2006 ◽  
Vol 100 (4) ◽  
pp. 044506 ◽  
Author(s):  
C. Platzer-Björkman ◽  
T. Törndahl ◽  
D. Abou-Ras ◽  
J. Malmström ◽  
J. Kessler ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Band Alignment ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Layer Deposition
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