Atomic layer deposition of In2 O3 transparent conductive oxide layers for application in Cu(In,Ga)Se2 solar cells with different buffer layers

2016 ◽  
Vol 213 (6) ◽  
pp. 1541-1552 ◽  
Author(s):  
Jan Keller ◽  
Lars Stolt ◽  
Marika Edoff ◽  
Tobias Törndahl
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Buffer Layers ◽  
Oxide Layers ◽  
Layer Deposition ◽  
Conductive Oxide

Atomic layer deposition of Zn1−xMgxO buffer layers for Cu(In,Ga)Se2 solar cells

2007 ◽  
Vol 15 (3) ◽  
pp. 225-235 ◽  
Author(s):  
T. Törndahl ◽  
C. Platzer-Björkman ◽  
J. Kessler ◽  
M. Edoff
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Layer Deposition

scholarly journals Tantalum nitride films integrated with transparent conductive oxide substrates via atomic layer deposition for photoelectrochemical water splitting

2016 ◽  
Vol 7 (11) ◽  
pp. 6760-6767 ◽  
Author(s):  
Hamed Hajibabaei ◽  
Omid Zandi ◽  
Thomas W. Hamann
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Photoelectrochemical Water Splitting ◽  
Tantalum Nitride ◽  
Solar Water Splitting ◽  
Layer Deposition ◽  
Oxide Substrates ◽  
Conductive Oxide

The first example of tantalum nitride electrodes on transparent conductive oxide substrates, which enables solar water splitting, is presented.

Cu(InGa)Se2Thin-film Solar Cells with High Resistivity ZnO Buffer Layers Deposited by Atomic Layer Deposition

1999 ◽  
Vol 38 (Part 1, No. 9A) ◽  
pp. 4989-4992 ◽  
Author(s):  
Sutichai Chaisitsak ◽  
Takeshi Sugiyama ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Buffer Layers ◽  
High Resistivity ◽  
Layer Deposition

scholarly journals On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

2016 ◽  
Vol 120 (8) ◽  
pp. 085314 ◽  
Author(s):  
Bart Macco ◽  
Marcel A. Verheijen ◽  
Lachlan E. Black ◽  
Beatriz Barcones ◽  
J. Melskens ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Solid Phase ◽  
Oxide Films ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Solid Phase Crystallization ◽  
Layer Deposition ◽  
Conductive Oxide

Transparent Conductive Oxide Nanocrystals Coated with Insulators by Atomic Layer Deposition

2016 ◽  
Vol 28 (15) ◽  
pp. 5549-5553 ◽  
Author(s):  
John Ephraim ◽  
Deanna Lanigan ◽  
Corey Staller ◽  
Delia J. Milliron ◽  
Elijah Thimsen
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Layer Deposition ◽  
Conductive Oxide

scholarly journals The Effect of ALD-Zn(O,S) Buffer Layer on the Performance of CIGSSe Thin Film Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 412
Author(s):  
Woo-Jin Choi ◽  
Wan Woo Park ◽  
Yangdo Kim ◽  
Chang Sik Son ◽  
Donghyun Hwang
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Good Control ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Glass Temperature ◽  
Layer Deposition ◽  
Pulse Ratio ◽  
First Results ◽  
Cigs Solar Cells

In this paper, we report the development of Cd-free buffers using atomic layer deposition (ALD) for Cu(In,Ga)(S,Se)2-based solar cells. The ALD process gives good control of thickness and the S/S +O ratio content of the films. The influence of the growth per cycle (GPC) and the S/(S+O) ratio, and the glass temperature of the atomic layer deposited Zn(O,S) buffer layers on the efficiency of the Cu(In,Ga)(S,Se)2 solar cells were investigated. We present the first results from our work on cadmium-free CIGS solar cells on substrates with an aperture area of 0.4 cm2. These Zn(O,S) layers were deposited by atomic layer deposition at 120 °C with S/Zn ratios of 0.7, and layers of around 30 nm. The Zn(O,S) 20% (Pulse Ratio: H2S/H2O+H2S) process results in a S/Zn ratio of 0.7. We achieved independently certified aperture area efficiencies of 17.1% for 0.4 cm2 cells.

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