scholarly journals Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities

2012 ◽  
Vol 20 (20) ◽  
pp. 22181 ◽  
Author(s):  
Andrew Lee ◽  
Qi Jiang ◽  
Mingchu Tang ◽  
Alwyn Seeds ◽  
Huiyun Liu
2006 ◽  
Vol 89 (7) ◽  
pp. 073113 ◽  
Author(s):  
H. Y. Liu ◽  
S. L. Liew ◽  
T. Badcock ◽  
D. J. Mowbray ◽  
M. S. Skolnick ◽  
...  

2008 ◽  
Vol 44 (11) ◽  
pp. 679 ◽  
Author(s):  
S. Freisem ◽  
G. Ozgur ◽  
K. Shavritranuruk ◽  
H. Chen ◽  
D.G. Deppe

2004 ◽  
Vol 03 (01n02) ◽  
pp. 187-192
Author(s):  
G. LIN ◽  
I. F. CHEN ◽  
F. J. LAY ◽  
J. Y. CHI ◽  
D. A. LIVSHITS ◽  
...  

We have investigated light-current and spectral characteristics of 2-, 5- and 10-stack InAs / InGaAs / GaAs quantum dot (QD) ridge-waveguide lasers grown by MBE. Ultra-low threshold current of 1.43 mA was achieved for 2-stack QD laser. Simultaneous lasing at ground- and excited-states was observed. This effect is accounted for the finite time of carriers capture to the ground-state in QDs. Multi-stack QD structures enables to maintain continuous-wave (CW) ground-state lasing up to the current density of 100×Jth and to achieve the highest output power and efficiency ever recorded for any single-mode lasers of 1.3-μm-wavelength range.


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