Microcrystalline Silicon Prepared by Hot-Wire Chemical Vapour Deposition for Thin Film Solar Cell Applications

AbstractThe influence of the surface roughness of Ag/ZnO coated substrates on the AM1.5 J-V characteristics of microcrystalline silicon (μc-Si:H) solar cells with an i-layer made by the hot-wire chemical vapour deposition (HWCVD) technique is discussed. Cells deposited on substrates with an intermediate rms roughness show the highest efficiency. When using reverse hydrogen profiling during i-layer deposition, an efficiency of 8.5 % was reached for single junction μc-Si:H n-i-p cells, which is the highest for μc-Si:H n-i-p cells with a hot-wire i-layer.

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Low Temperature Silicon Nitride by Hot Wire Chemical Vapour Deposition for the Use in Impermeable Thin Film Encapsulation on Flexible Substrates

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2011.5100 ◽

2011 ◽

Vol 11 (9) ◽

pp. 8202-8205 ◽

Cited By ~ 11

Author(s):

D. A. Spee ◽

C. H. M. van der Werf ◽

J. K. Rath ◽

R. E. I. Schropp

Keyword(s):

Thin Film ◽

Silicon Nitride ◽

Low Temperature ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Flexible Substrates ◽

Hot Wire ◽

Thin Film Encapsulation

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Microdoping compensation of microcrystalline silicon obtained by hot-wire chemical vapour deposition

Solar Energy Materials and Solar Cells ◽

10.1016/s0927-0248(00)00030-1 ◽

2000 ◽

Vol 63 (3) ◽

pp. 237-246 ◽

Cited By ~ 6

Author(s):

C Voz ◽

D Peiró ◽

M Fonrodona ◽

D Soler ◽

J Bertomeu ◽

...

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Hot Wire ◽

Microcrystalline Silicon

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Intrinsic amorphous and microcrystalline silicon by hot-wire-deposition for thin film solar cell applications

Thin Solid Films ◽

10.1016/s0040-6090(01)01280-9 ◽

2001 ◽

Vol 395 (1-2) ◽

pp. 305-309 ◽

Cited By ~ 40

Author(s):

Stefan Klein ◽

Friedhelm Finger ◽

Reinhard Carius ◽

Heribert Wagner ◽

Martin Stutzmann

Keyword(s):

Thin Film ◽

Solar Cell ◽

Thin Film Solar Cell ◽

Hot Wire ◽

Microcrystalline Silicon

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Amorphous silicon thin film solar cells deposited entirely by hot-wire chemical vapour deposition at low temperature (<150 °C)

Thin Solid Films ◽

10.1016/j.tsf.2009.01.074 ◽

2009 ◽

Vol 517 (12) ◽

pp. 3575-3577 ◽

Cited By ~ 15

Author(s):

Fernando Villar ◽

Aldrin Antony ◽

Jordi Escarré ◽

Daniel Ibarz ◽

Rubén Roldán ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Low Temperature ◽

Amorphous Silicon ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Thin Film Solar Cells ◽

Hot Wire ◽

Silicon Thin Film

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Microcrystalline Silicon Thin Film Growth by Electron Cyclotron Resonance Chemical Vapour Deposition at 80°C for Plastic Application Ian

MRS Proceedings ◽

10.1557/proc-762-a5.2 ◽

2003 ◽

Vol 762 ◽

Author(s):

Ian Y.Y. Bu ◽

A.J. Flewitt ◽

J Robertson ◽

W.I. Milne

Keyword(s):

Thin Film ◽

Chemical Vapour Deposition ◽

Cyclotron Resonance ◽

Vapour Deposition ◽

Electron Cyclotron Resonance ◽

Film Growth ◽

Chemical Vapour ◽

Electron Cyclotron ◽

Microcrystalline Silicon ◽

Silicon Thin Film

AbstractMicrocrystalline silicon deposited at low temperatures (<150°C) is a candidate material for use as the channel layer in thin film transistors deposited on plastic substrates. This would enable driver electronics to be integrated onto cheap flexible AMLCD panel.In this study microcrystalline silicon was deposited by Electron Cyclotron Resonance Plasma Enhanced chemical Vapour Deposition (ECR-PECVD) at a temperature of 80°C, compatible with most plastic such as PET and PEN. A source gas mixture of SiH4 and H2 was employed. The structural and optical properties of samples deposited under a range of deposition conditions were measured.

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