Improved Efficiency of Single Junction Microcrystalline Silicon n-i-p Solar Cells with an i-Layer Made by Hot-Wire CVD
Keyword(s):
Hot Wire
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AbstractThe influence of the surface roughness of Ag/ZnO coated substrates on the AM1.5 J-V characteristics of microcrystalline silicon (μc-Si:H) solar cells with an i-layer made by the hot-wire chemical vapour deposition (HWCVD) technique is discussed. Cells deposited on substrates with an intermediate rms roughness show the highest efficiency. When using reverse hydrogen profiling during i-layer deposition, an efficiency of 8.5 % was reached for single junction μc-Si:H n-i-p cells, which is the highest for μc-Si:H n-i-p cells with a hot-wire i-layer.
Microdoping compensation of microcrystalline silicon obtained by hot-wire chemical vapour deposition
2000 ◽
Vol 63
(3)
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pp. 237-246
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Keyword(s):
Hot Wire
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Keyword(s):